Manufacturing process of large-diameter silicon wafer

Abstract

The invention discloses a manufacturing process of a large-diameter silicon wafer. The process comprises the following steps of: (1) carrying out double-sided grinding on a chamfered silicon wafer by using a double-sided grinding machine, wherein the mesh number of a used grinding abrasion wheel is 2,000-3,000#, and the removal amount is 20-100 microns; (2) carrying out single-sided grinding on the silicon wafer, wherein the step of single-sided grinding refers to a process of only grinding one side, or grinding one side and then grinding the other side, the removal amount of grinding one side is 5-20 microns, the mesh number of the used grinding abrasion wheel is 5,000-8,000#; (3) carrying out alkaline corrosion on the silicon wafer, wherein the alkali is KOH, and the removal amount is 0.1-5 microns; (4) carrying out conventional double-sided polishing on a single-sided grinding sheet, wherein the removal amount is 10-30 microns; and (5) carrying out single-sided finishing polishing and cleaning on the silicon wafer. A laser inscription process is added after the double-sided grinding or single-sided grinding, and cleaning and drying processes can be added after the (1) to (5) steps. According to the silicon wafer manufactured by the process disclosed by the invention, the silicon wafer with high flatness can be obtained, meanwhile the processing efficiency of the silicon wafer can be greatly improved. The manufacturing process of the large-diameter silicon wafer is a silicon wafer manufacturing method with low damage and high precision.

Description

technical field [0001] The invention relates to a large-diameter silicon wafer manufacturing process, in particular to a method of finishing the silicon wafer with a single-sided grinding process after double-sided grinding, removing the pointed protrusions on the surface, and then polishing the silicon wafer through a polishing process. . Background technique [0002] Semiconductor silicon wafer is the main substrate material of modern ultra-large-scale integrated circuits. Generally, it is an integrated circuit-level wafer manufactured through processes such as crystal pulling, slicing, chamfering, grinding (including grinding and grinding), corrosion, polishing, and cleaning. Semiconductor wafers. Among them, the grinding process after chamfering can make the silicon wafer obtain a higher-precision shape, and the machining accuracy directly affects the geometric parameters of the product. [0003] In the process of 300mm silicon wafer processing, the processing before p...

AI Technical Summary

Problems solved by technology

Although the grinding disc print can be removed by grinding process, the grinding equipment occupies a large area and is easy to pollute the workshop

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