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Polycrystalline silicon processing method

A polysilicon, silicon oxynitride technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as surface defects and wafer process effects

Inactive Publication Date: 2012-07-04
CSMC TECH FAB2 CO LTD
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Problems solved by technology

[0003] However, since the phosphoric acid used in the SiON Strip step usually has a relatively high concentration, after the wafer is soaked in concentrated phosphoric acid, there will be a high amount of residual phosphorus on the surface. When the wafer stays in the air for a period of time, , these residual phosphorus elements will crystallize into small particles and form surface defects, which will affect the wafer manufacturing process

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Embodiment Construction

[0009] Please refer to figure 1 As shown, the present invention provides a polysilicon process method, which includes the following steps: SiON DEP. ), SiON Strip (i.e. silicon oxynitride removal) and Poly annealing oxidation (i.e. polysilicon annealing oxidation)

[0010] The SiON DEP. process (that is, silicon oxynitride deposition) is to cover SiON (silicon oxynitride) on the surface of polysilicon by chemical vapor deposition (Chemical Vapor Deposition) to form an anti-reflection layer (ARC), In this way, the reflectivity of the polysilicon surface during photolithography is reduced, and at the same time, the resolution of the photolithographic pattern is improved, making the photolithography more accurate.

[0011] The Poly photolithography (i.e. polysilicon photolithography) process is to coat a thin layer of photoresist on the surface of polysilicon, and use a mask to irradiate the photoresist, so that the photoresist in some areas is exposed to light, and after develo...

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Abstract

The invention provides a polycrystalline silicon processing method which comprises the following steps of: firstly, depositing silicon oxynitride on the surface of polycrystalline silicon to ensure that the silicon oxynitride covers the surface of the polycrystalline silicon; secondly, photoetching the polycrystalline silicon; thirdly, etching the photoetched polycrystalline silicon; fourthly, sequentially enabling the etched polycrystalline silicon to pass through a phosphoric acid solvent and a sulfuric acid and hydrogen peroxide mixed solvent; and finally, annealing and oxidizing the polycrystalline silicon. Compared with the prior art, the polycrystalline silicon processing method has the beneficial effects that the polycrystalline silicon passes through the phosphoric acid solvent and then the sulfuric acid and hydrogen peroxide mixed solvent to ensure that phosphorus elements remained on the surface of the polycrystalline silicon are removed by the sulfuric acid and hydrogen peroxide mixed solvent, thus the phenomenon that phosphorus elements remain on the surface of the polycrystalline silicon to form crystals is avoided.

Description

【Technical field】 [0001] The invention relates to a polysilicon process method in the field of wafer manufacturing, in particular to a new method capable of improving the crystallization of phosphorus. 【Background technique】 [0002] In the wafer manufacturing process, the polysilicon (Poly) process is a very important process, which usually includes the following five steps: SiON DEP (ie, silicon oxynitride deposition), Poly lithography (ie, polysilicon lithography), Poly etching (i.e. polysilicon etching), SiON Strip (i.e. silicon oxynitride removal) and Poly annealing oxidation (i.e. polysilicon annealing oxidation), wherein the SiON (silicon oxynitride) acts as an anti-reflection layer in the photolithography step , the anti-reflective layer will be completely removed in the SiON Strip step after Poly etching. In the common SiON Strip step, phosphoric acid is used as a chemical solvent to remove residual SiON. [0003] However, since the phosphoric acid used in the SiON...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/311
Inventor 李健杨兆宇赵志勇张明敏李丽丽
Owner CSMC TECH FAB2 CO LTD
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