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Method for preparing germanium-based pseudo gallium arsenide (GaAs) substrate

A gallium arsenide and germanium substrate technology, applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problem that the problem of silicon-based light emission has not been well solved, so as to reduce defects, improve quality, reduce Effect of growth temperature

Active Publication Date: 2012-07-04
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, the problem of silicon-based luminescence has not been well resolved

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  • Method for preparing germanium-based pseudo gallium arsenide (GaAs) substrate
  • Method for preparing germanium-based pseudo gallium arsenide (GaAs) substrate
  • Method for preparing germanium-based pseudo gallium arsenide (GaAs) substrate

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Embodiment Construction

[0021] see figure 1 , figure 2 As shown, the invention provides a method for preparing a germanium-based pseudo-gallium arsenide substrate, comprising the following steps:

[0022] Step 1: Clean the germanium substrate 1 and put it into the reaction chamber of the MOCVD equipment; wherein the germanium substrate 1 is n-type low-resistance (001) germanium, biased to [110] 4°, and the resistivity is 0.01-0.1 ohm cm; cleaning Ge substrate 1 is made of 5% HF and 5% H 2 o 2 Cycle wash three times, and finally wash with 5% HF, the cleaning time of each solution is 30s; 5% HF is to remove oxides, 5% H 2 o 2 The role of Ge is to oxidize the surface of Ge. After cyclic oxidation and deoxidation, a fresh Ge surface with low roughness is obtained.

[0023] Step 2: Treat the germanium substrate 1 at a high temperature of 700° C. for 20 minutes to remove the oxide before the germanium substrate 1 is put into the reaction chamber, and form stable diatomic steps on the surface of Ge. ...

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Abstract

The invention discloses a method for preparing a germanium-based pseudo gallium arsenide (GaAs) substrate. The method comprises the following steps of: 1, cleaning a germanium substrate, and putting the germanium substrate in a reaction chamber of metal organic chemical vapor deposition (MOCVD) equipment; 2, treating the germanium substrate at the temperature of 700 DEG C; 3, epitaxially growing a buffer layer on the germanium substrate by employing an MOCVD method; and 4, growing a pseudo GaAs layer on the buffer layer so as to finish preparation of the material. By combining the MOCVD epitaxial technology and a low-temperature buffer layer of which the materials are changed, the pseudo GaAs layer matched with germanium is formed, and misfit dislocation of a GaAs / Si interface and extension of an avalanche photo diode (APD) to an epitaxial layer are suppressed; and moreover, by control of a low growth rate, the defects can be effectively overcome, and a high-quality pseudo GaAs material is obtained.

Description

technical field [0001] The invention relates to a preparation method for growing a pseudo-gallium arsenide substrate matched with germanium lattice by using MOCVD epitaxy and low-temperature buffer layer technology. Background technique [0002] The preparation of germanium-based III-V compound semiconductor materials began in the 1980s, and has always been the focus and difficulty of heteroepitaxy. Because of the advantages of germanium's high mechanical strength, low price, mature process, and high efficiency / mass ratio, the epitaxy of GaAs / Ge is mainly aimed at solar cells. However, due to the small lattice mismatch between gallium arsenide and germanium materials (about -0.08%) and small thermal expansion coefficient difference (germanium 5×10 -6 K -1 Gallium Arsenide 5.75×10 -6 K -1 ), since entering the 21st century, with the development of microelectronics and optoelectronics industries, it has become particularly important to use Ge as a buffer layer to prepare h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
Inventor 周旭亮于红艳潘教青朱洪亮王圩
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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