Nanowire field effect transistor with split-gate structure

Abstract

The invention discloses a nanowire field effect transistor with a split-gate structure. The transistor is formed by a split-gate electrode, a source region, a drain region, a channel region and a gate dielectric layer, wherein the channel region is columnar and is positioned in the center of the nanowire field effect transistor, and a material forming the channel region is a semiconductor material; the gate dielectric layer totally encircles the channel region coaxially; the split-gate electrode is positioned outside the gate dielectric layer and totally encircles the gate dielectric layer coaxially, and materials forming the split-gate electrode include two kinds of different materials; and the source region and the drain region are positioned at two sides of the channel region respectively. The introduction of the split-gate electrode structure can effectively improve the on-state current of nanowire transistors in prior arts and improve the current switch ratio and the working speed of devices. Simultaneously, the transistor is less affected by threshold voltage shift and drain induced barrier lowering effect resulted from short channel effect, and the performance of size reduction is more excellent.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit device, in particular to a nanowire field effect transistor with a split gate structure. Background technique [0002] The integrated circuit industry's pursuit of higher speed, higher integration, and lower power consumption is driving the development of semiconductor technology, and the feature size of semiconductor devices is getting smaller and smaller. Due to the limitation of short channel effect and other limitations of traditional field effect transistors at nanometer size, the performance is degraded. New device structures have been proposed, including silicon-on-insulator, double-gate, triple-gate, and nanowire field-effect transistors. Among them, the nanowire field effect transistor can provide a high current switching ratio, and is less affected by the short channel effect and the leakage-induced barrier lowering effect. On the basis of existing nanowire field effect transistors...

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Problems solved by technology

Due to the limitation of short channel effect and other limitations of tradi

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