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Low-temperature sinterable microwave dielectric ceramic BiZn2VO4 and preparation method thereof

A technology of microwave dielectric ceramics and low-temperature sintering, which is applied in the field of dielectric ceramic materials, can solve problems such as limited systems, restrictions on low-temperature co-firing technology and the development of microwave multilayer devices, and achieve a small resonant frequency temperature coefficient and high application value. Effect

Inactive Publication Date: 2012-07-18
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Application Information

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Problems solved by technology

However, the system for low-fired microwave dielectric ceramics is still relatively limited, which largely limits the development of low-temperature co-firing technology and microwave multilayer devices

Method used

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  • Low-temperature sinterable microwave dielectric ceramic BiZn2VO4 and preparation method thereof

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Embodiment

[0017] Table 1 shows four specific examples of different sintering temperatures constituting the present invention and their microwave dielectric properties. The preparation method is as above, and the microwave dielectric performance is evaluated by the cylindrical dielectric resonator method.

[0018] The ceramics can be widely used in the manufacture of microwave devices such as various dielectric resonators and filters, and can meet the technical needs of mobile communication, satellite communication and other systems.

[0019] The present invention is by no means limited to above embodiment, has the element such as La, Eu, Y, Ce, Gd, Tb, Dy, Ho, Tm, Yb and Lu etc. with the similar structure and chemical property of Bi etc. also can make and the present invention Dielectric ceramics with similar crystal structure and properties.

[0020] Table 1:

[0021]

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Abstract

The invention discloses a low-temperature sinterable microwave dielectric ceramic BiZn2VO4 and a preparation method thereof. The composition of the dielectric ceramic material is BiZn2VO4. The preparation method comprises the following steps of: (1) compounding the raw powder of ZnO, Bi2O3 and V2O5 with purity more than 99.9% according to the composition of BiZn2VO4; (2) mixing the raw materials in the step (1) for 12 hr in a wet ball milling way, taking distilled water as a solvent, drying the solution, and presintering the powder for 6 hr at the atmosphere of 700 DEG C; and (3) adding a binding agent into the powder prepared in the step (2), pelletizing the powder, performing compression molding, and finally sintering the product for 4 hr at the atmosphere of 780-820 DEG C, wherein the sintering agent is a polyvinyl alcohol with mass concentration of 5%, and the amount of the sintering agent accounts for 3% of total amount of powder. The ceramic prepared by the method has good sinterability at 780-820 DEG C, the dielectric constant reaches 33-37, the quality factor (Qf) value reaches up to 55000-104000 GHz, and the temperature coefficient of resonance frequency is small.

Description

technical field [0001] The invention relates to a dielectric ceramic material, in particular to a dielectric resonator, a filter and other microwave components used at microwave frequencies, as well as the dielectric ceramic material of a ceramic capacitor or a temperature compensation capacitor and a preparation method thereof. Background technique [0002] Microwave dielectric ceramics refer to ceramics that are used as dielectric materials in microwave frequency band (mainly UHF, SHF frequency band) circuits and perform one or more functions. They are widely used as resonators, filters, and dielectric substrates in modern communications. Chips, dielectric waveguide circuits and other components are the key basic materials of modern communication technology. They have been used in portable mobile phones, car phones, cordless phones, TV satellite receivers, military radars, etc. It is playing an increasingly important role in the process of miniaturization and integration. ...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/622
Inventor 胡长征方亮郭汝丽郑少英向飞
Owner GUILIN UNIVERSITY OF TECHNOLOGY