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Micro-voltage high-overload sensor chip of beam membrane single island structure

A sensor chip, high overload technology, applied in microstructure technology, microstructure devices, piezoelectric devices/electrostrictive devices, etc., can solve the problems of staying, unable to adapt to the working environment in the aerospace field, unable to meet the accurate measurement in the aerospace field, etc.

Inactive Publication Date: 2014-01-15
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] With the development of aerospace technology, my country's current MEMS micro-pressure sensors are still mainly at the KPa level, which cannot meet the needs of the aerospace field for Pa-level micro-pressure measurement, nor can it adapt to the working environment of the aerospace field, and cannot meet the needs of the aerospace field. Requirements for precise measurement technology of deep and high-altitude micro-pressure

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  • Micro-voltage high-overload sensor chip of beam membrane single island structure
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  • Micro-voltage high-overload sensor chip of beam membrane single island structure

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Embodiment Construction

[0020] Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0021] refer to figure 1 and figure 2 , a beam-membrane single-island structure micro-voltage high overload sensor chip, comprising a silicon substrate 1, a mass 4 and four single beams 3-1, 3-2, 3-3, 3-4 processed in the middle of the silicon substrate 1 , the quality block 4 is connected to the silicon substrate 1 through four single beams 3-1, 3-2, 3-3, 3-4, and the silicon substrate 1, the mass block 4 and the four single beams 3-1, 3-2 , 3-3, and 3-4 are processed into a film 2 with a thickness of 10 to 30 μm, the back of the silicon substrate 1 is bonded to the Pyrex7740 glass 5, and the back of the mass block 4 is thinned so that the mass block 4 is bonded to the Pyrex7740 glass 5 There is a gap of 5-10μm between them in a vacuum environment, refer to image 3 and Figure 4 , the anti-adsorption electrode 9 on the Pyrex7740 glass 5 is inser...

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Abstract

The invention provides a micro-voltage high-overload sensor chip of a beam membrane single island structure, comprising a silicon base, wherein a mass block and four single beams are machined at the middle part of the silicon base; a thin film with the thickness of 10-30 mu m is machined in a space surrounded by the silicon base, the mass block and the four single beams; the back side of the silicon base is bonded with Pyrex7740 glass and a gap of 5-10 mu m is reserved between the mass block and the Pyrex7740 glass under a vacuum environment by thinning the back side of the mass block; meanwhile, an anti-adsorbing electrode on the Pyrex7740 glass is inserted into a bonding region and a cavity formed among the thin film, the mass block and the Pyrex7740 glass is vacuumized; and at the front side of the silicon base, four piezoresistor strips are mutually connected to form a semi-open-loop Wheatstone bridge. The four piezoresistor strips are introduced to improve the rigidity of the whole body and the stress is concentrated again; the micro-voltage high-overload sensor chip has the characteristics of good linearity and high flexibility; and meanwhile, the micro-voltage high-overload sensor chip can resist 500 times of high overload.

Description

technical field [0001] The invention relates to the technical field of MEMS piezoresistive absolute pressure sensors, in particular to a beam-membrane single-island structure micro-pressure high-overload sensor chip. Background technique [0002] With the development of micro-mechanical electronic system technology, MEMS micro-pressure sensors have been widely used in wind tunnel testing, biomedical electronics, petrochemical and other fields, especially in aerospace, which has strict requirements on sensor volume and weight. MEMS Sensors are undoubtedly the ideal choice. [0003] With the development of aerospace technology, my country's current MEMS micro-pressure sensors are still mainly at the KPa level, which cannot meet the needs of the aerospace field for Pa-level micro-pressure measurement, nor can it adapt to the working environment of the aerospace field, and cannot meet the needs of the aerospace field. The demand for precise measurement technology of deep and hig...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/18B81B3/00B81B7/02
Inventor 赵玉龙于忠亮孟夏薇田边王伟忠
Owner XI AN JIAOTONG UNIV