Flash electrically erasable programmable read-only memory (EEPROM) dynamic reference resource circuit structure

Abstract

The invention discloses a flash electrically erasable programmable read-only memory (EEPROM) dynamic reference resource circuit structure. The flash EEPROM dynamic reference resource circuit structure comprises a group of reference cells which compose a reference cell array, and a reference cell decoding circuit which multiplexes a word selection decoding circuit of a memory array. The reference cells have one-to-one correspondence relationships with all operation cells of all word lines. In a read process, the reference cells produce reference cell conduction currents. The reference cell conduction currents flow into a sense amplifier through reference bit lines. Simultaneously, read currents of memory cells of the operation cells corresponding to the reference cells flow into the sense amplifier by memory cell bit lines. Through comparison between magnitudes of the reference cell conduction currents and magnitudes of the read currents of the memory cells, reading of stored data is realized. In a programming process, target data is written in memory cells and simultaneously, the reference cells are refreshed and cycled. The flash EEPROM dynamic reference resource circuit structure can eliminate the influence produced by parasitic loading on an input terminus of the sense amplifier, realizes tracking of memory cell threshold-voltage drifts, and improves stability, reliability and durability of a chip.

Description

technical field [0001] The invention relates to a Flash EEPROM circuit structure, in particular to a Flash EEPROM dynamic reference source circuit structure. Background technique [0002] With the continuous improvement of semiconductor manufacturing technology and integrated circuit design capabilities, people have been able to integrate processors, memory, analog circuits, interface logic and even radio frequency circuits into one chip, which is the System-on-Chip (System-on-Chip, SoC). With the continuous increase of data throughput and the requirement of low power consumption of the system, the memory requirement of system-on-chip is increasing. It is predicted that about 90% of the silicon chip area will be occupied by memories with different functions in the future, and embedded memories will become the decisive factor dominating the entire system. Flash EEPROM has become an indispensable and important part of embedded memory because of its characteristics of not los...

AI Technical Summary

Problems solved by technology

Currently commonly used static reference sources are usually unable to track changes in ambient temperature, and at the same time cannot track the threshold drift of memory cells after repeated erasing / writing (P / E cycling). deterioration

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