Current-type sensitive amplifier for reading circuit of ferro-electric random access memory
A technology of random access memory and sense amplifier, applied in the field of current-mode sense amplifier, can solve the problem that EEPROM is difficult to meet the demand, and achieve the effect of improving anti-interference and reliability, low power consumption and small occupied area
Active Publication Date: 2014-08-06
HENAN UNIV OF SCI & TECH
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[0002]With the development of IT technology, the demand for non-volatile memory is increasing, the reading and writing speed is required to be faster, and the power consumption requirement is increasing Small, the existing traditional non-volatile memory, such as EEPROM, FLASH has been difficult to meet the demand
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[0021] Sensitive amplifier is a relatively important circuit in ferroelectric random memory. It has two main functions. One is to amplify the small voltage difference generated on the bit lines on both sides of the ferroelectric random memory after charge redistribution; the other is to amplify the destructive The data "1" destroyed during the reading process is written back and the refresh of the data "0" is completed, so that the stored information can be restored. Because it is directly connected to the storage unit, its sensitivity directly determines the anti-interference ability and reliability of the circuit, and its working time directly affects the working speed of the circuit. Sense amplifiers are analog in nature and their performance affects the overall timing of the memory.
[0022] Below in conjunction with accompanying drawing, the present invention will be further described with specific embodiment:
[0023] figure 1 It is the circuit structure diagram of th...
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The invention relates to the technical field of non-volatile memory, in particular to a current-type sensitive amplifier used in a readout circuit of a ferroelectric random access memory. The invention consists of a pair of cross-coupled CMOS inverters, a PMOS transistor whose gate is connected to the enable signal and an NMOS transistor whose gate is connected to the enable signal, and the input voltage is converted into a current and then compared and amplified, ignoring the bit line The impact of the asymmetry of the load capacitance on the upper circuit; the two NMOS transistors controlled by the bit line pre-discharge signal can make the bit line voltage zero in static state, reducing the interference to internal signals. The invention has high anti-interference and high reliability when reading data, simple circuit structure, small occupied area, fast speed, low power consumption and integrated input and output.
Description
technical field [0001] The invention relates to the technical field of non-volatile memory, in particular to a current-type sensitive amplifier used in a readout circuit of a ferroelectric random access memory. Background technique [0002] With the development of IT technology, the demand for non-volatile memory is increasing, the reading and writing speed requirements are getting faster and faster, and the power consumption requirements are getting smaller and smaller. Existing traditional non-volatile memories, such as EEPROM, FLASH has been difficult to meet the demand. [0003] Ferroelectric random access memory is a non-volatile memory that will not lose its content when the power is turned off. Memories integrated with thin film and silicon-based CMOS processes. After the ferroelectric crystal of the ferroelectric memory is applied with an electric field, the central atom moves in the crystal along the direction of the electric field. When the atom moves, it passes ...
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IPC IPC(8): G11C7/06
Inventor 牛丹梅张志勇张丽丽黄涛王剑贾涛宋晓莉田伟莉
Owner HENAN UNIV OF SCI & TECH