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Mold manufacture method and mold formed by said method

A technology of metal mold and manufacturing method, which is applied in the photoplate making process of patterned surface, semiconductor/solid-state device manufacturing, transportation and packaging, etc., and can solve the problems of filling holes that cannot be plated

Inactive Publication Date: 2012-07-25
WASEDA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, with the conventional method, there are problems such as the inability to fill the hole with plating.

Method used

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  • Mold manufacture method and mold formed by said method
  • Mold manufacture method and mold formed by said method
  • Mold manufacture method and mold formed by said method

Examples

Experimental program
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Effect test

Embodiment 1）

[0069] First, a nanoscale pattern is formed on an Si oxide film which is an inorganic thin film formed on a Si substrate. Si substrates use 1-inch wafers. In addition, the specification of the formed pattern was 200 nm in diameter.

[0070] Then, a self-assembled film is formed by liquid phase growth on the pattern. In this example, a toluene solution containing 1 wt.% of a silane coupling agent heated to 60° C. was used as the first solution, and a self-assembled film was formed by dipping in the solution for 10 minutes. As the silane coupling agent, 3-[2-(2-aminoethylamino)ethylamino]propyl-trimethoxysilane (TAS) was used.

[0071] Next, a metal ion layer and a thin film plating layer are sequentially formed as a conductive layer. The metal ion layer was formed by immersing the Si substrate on which the self-assembled film had been formed in a solution containing Pd as the second solution for 1 minute. The solvent uses dilute hydrochloric acid. In addition, the concentr...

Embodiment 2）

[0078] Next, the adhesion between the inorganic thin film and the conductive layer was confirmed. Self-assembled films were formed on Si substrates using 3-[2-(2-aminoethylamino)ethylamino]propyl-trimethoxysilane (TAS) as a silane coupling agent. A metal ion layer of Pd is formed on this self-assembled film. Further, an electroless sample is formed on the metal ion layer. As a comparative example, a Si substrate given a Sn-Pd treatment was formed.

[0079] Adhesion was measured using the Figure 9 The assay device 10 is shown. The measurement device 10 includes an electronic digital scale 11 , a displacement meter 12 , a piezoelectric transmission device 13 , a microscope 14 and an electronic computer 15 .

[0080] The electronic digital scale 11 is provided with a sample pan 16 . The sample disk 16 is configured to hold the sample S in a state inclined at a predetermined angle. Also, its given angle is 30 degrees in this embodiment.

[0081] The piezoelectric actuator ...

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Abstract

Disclosed are a mold manufacture method capable of easily manufacturing molds having nanosized fine structures, and a mold formed by said method. The disclosed method is characterized by including a step for forming, on an inorganic thin film (1) having fine structures, a self-assembled film (2) configured from a silane coupling agent having functional groups including at least one of an amino group, a mercapto group, a thiol group, a disulfide group, a cyano group, a halogen group, and a sulfonic acid group; a conducting layer forming step for forming a conducting layer (3) on the aforementioned self-assembled film (2); and a step for forming a metal film (4) from an electrolytic plating on the aforementioned conducting layer (3).

Description

technical field [0001] The present invention relates to a method of manufacturing a metal mold and a metal mold formed by the method, and is particularly suitable for application to a metal mold having a fine structure. Background technique [0002] As shown in FIG. 12, it is a conventional method of producing a metal mold. A resist is coated on a glass substrate or a Si substrate 100, and a pattern 101 is formed on the resist using ultraviolet rays, electron beams, X-rays, or the like. The conductive layer 102 is formed thereon using a sputtering method (for example, Patent Document 1). Then, Ni plating is applied on the conductive layer 102 to form a metal film 103 . The metal film 103 is released from the mold to obtain the metal mold 104 . [0003] According to the above-mentioned conventional method, it is possible to fill holes with plating and the like without hindrance if the fine structure is submicron. [0004] prior art literature [0005] patent documents ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B29C33/38B29C59/02H01L21/027
CPCB82Y10/00G03F7/0002B82Y40/00Y10T428/24612
Inventor 本间孝之斋藤美纪子
Owner WASEDA UNIV
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