Silicon germanium film parallel transfer method applied to uncooled infrared focal plane

Abstract

The invention discloses a silicon germanium film parallel transfer method applied to an uncooled infrared focal plane. The silicon germanium film parallel transfer method comprises the following steps of: cleaning wafers; gluing and pre-roasting the wafers; fixing the wafers by using a clamp to form a wafer pair; performing thermal compression bonding on the wafers; removing an SI supporting layer and a BOX layer; and the like. According to the silicon germanium film parallel transfer method, the problems of deposition conditions of a sensitive material and processing compatibility of the CMOS (Complementary Metal Oxide Semiconductor) wafers are not required to be considered; the silicon germanium / silicon quantum well material with deposition temperature of over 600 DEG C can be used; the range of the sensitive material capable of being used by the uncooled infrared focal plane can be expanded; a polishing process of a wafer bonding face is saved; the adhesion of the material after parallel transfer is also better, and the method is more suitable for large-scale production; and bonding glue is directly used as a sacrificial layer, both a coating process and a removal process of the bonding glue are simpler, and the thickness of the sacrificial layer is more flexible and controllable.

Description

technical field [0001] The invention belongs to the field of microelectronic processing technology applied to the manufacture of infrared imaging devices, in particular to a method for parallel transfer of silicon germanium thin films applied to uncooled infrared focal planes. Background technique [0002] Infrared imaging technology has a wide range of applications and demands in military and civilian fields. Infrared imaging reflects the information of thermal radiation on the surface of an object and its internal heat dissipation. It is an extension of people's vision beyond the visible light band and a new means of observing and perceiving the objective world. With the breakthrough of infrared sensitive material technology and the rapid development and maturity of MEMS (micro-electro-mechanical system) manufacturing technology, miniature bolometers have been widely used in military and civilian fields, such as thermal imaging cameras, night vision cameras, thermal Senso...

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Problems solved by technology

[0004] When using ion-assisted direct bonding, often due to the inhomogeneity of ion energy and bonding surface morphology, the bonding strength of the bonding area varies, or even cannot be bonded.

Due to the existence of these problems, especially its high requirements for surface roughness (<0.2nmRMS), this bonding method can only be realized in the laboratory with corresponding equipment, and it is difficult to adapt to large-scale array manufacturing

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