Solar cell emitting electrode corroding method

A technology for solar cells and emitters, applied in circuits, electrical components, climate sustainability, etc., can solve the problems of difficult control and repetition of corrosion, poor uniformity of sheet resistance, inconsistent emitter depth, etc., to improve wettability, easy Repeat, improve the effect of uniformity

Inactive Publication Date: 2012-08-15
SUN YAT SEN UNIV
4 Cites 8 Cited by

AI-Extracted Technical Summary

Problems solved by technology

The mixed solution of hydrofluoric acid and nitric acid is widely used in the texturing of polycrystalline silicon wafers, but for the corrosion of the emitter, the depth of the emitter is very shallow, and the requirements for corrosion control are very high. Control the corrosion speed and uniformity of the mixed solution Resilience has become a problem that is difficult to solve. After the emitter of the silicon wafer is corroded by a simple dilute mixed solution of hydrofluoric acid and ...
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Method used

Get two single-crystal silicon wafers that size is 125 * 125mm, through cleaning, cashmere making, square resistance after diffusion is 30 ohms/square, and one slice corrodes 120 seconds in the hydrofluoric acid nitric acid mixed solution that does not add additive , the other piece was corroded for 120 seconds in the mixed solution of hydrofluoric acid and nitric acid added with additives. After the two silicon chips were cleaned with dilute alkali solution, the square resistance of the silicon chip corroded in the corrosion solution without additives was tested at 30 ~60 ohm/square, and the square resistance of the silicon wafer corroded in the corrosion solution with additives is between 50 and 55. The prepared two batteries, the battery after corrosion in the corrosion solution with additives The open-circuit voltage is 13mV higher, the short-circuit current density is increased by 1mA/cm2, and the conversion efficiency is increased by 0.32% (absolute value).
Get two single-crystal silicon wafers that size is 125 * 125mm, through cleaning...
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Abstract

The invention discloses a treatment process of emitting electrodes of solar cells, and particularly relates to a solar cell emitting electrode corroding method. The method comprises steps that a mixing solution of hydrofluoric acid and nitric acid is used as basic corroding liquid; at least one or any combination of nitrous acid, nitrite, sulfuric acid, sulfuric acid or phosphate is added; factors of proportion, temperature, time and adding amount of additives of the corroding liquid are optimized; a high impurity concentration area on the surface of the emitting electrode is eliminated uniformly and controllably; and afterwards the emitting electrode is washed so as to manufacture the solar cell with low surface impurity concentration, or a selective emitting electrode solar cell in combination with a printing process of masking.

Application Domain

Technology Topic

Examples

  • Experimental program(2)

Example Embodiment

[0020] Example 1
[0021] Equipped with additive-free hydrofluoric acid and nitric acid etching solution, in which HF: HNO 3 : H 2 O (volume ratio of saturated solution) = 1:3:20; then configure the hydrofluoric acid and nitric acid etching solution with additives, in which HF:HNO 3 : H 2 O (volume ratio of saturated solution) = 1:3:20, the addition amount of sodium nitrite is 0.2mol/L, the addition amount of sodium sulfate is 0.1mol/L, the two mixed solutions are fully stirred and the temperature is stable At 20±2℃.
[0022] Take two single crystal silicon wafers with a size of 125×125mm. After cleaning, texturing, and diffusion, the square resistance is 30 ohms/square. One is etched in a mixed solution of hydrofluoric acid and nitric acid without additives for 120 seconds. After being etched in a mixed solution of hydrofluoric acid and nitric acid with additives for 120 seconds, the two silicon wafers were cleaned with a dilute alkali solution. After testing, the square resistance of the silicon wafers after etching in the etching solution without additives was 30-60 ohms. / Square, and the silicon chip resistance after etching in the additive-added etching solution is between 50 and 55. The prepared two batteries have high open circuit voltage after etching in the additive-added etching solution. 13mV, short-circuit current density increased by 1mA/cm 2 , The conversion efficiency is increased by 0.32% (absolute value).

Example Embodiment

[0023] Example 2
[0024] Equipped with additive-free hydrofluoric acid and nitric acid etching solution, in which HF: HNO 3 : H 2 O (volume ratio of saturated solution) = 1:3:20; then configure the hydrofluoric acid and nitric acid etching solution with additives, in which HF:HNO 3 :H2O (saturated solution volume ratio) = 1:3:20, the addition amount of sodium nitrite is 0.2mol/L, the addition amount of sodium sulfate is 0.1mol/L, the two mixed solutions are fully stirred and the temperature is stable At 20±2℃.
[0025] Take two single-crystal silicon wafers with a size of 125×125mm. After cleaning and texturing, the square resistance after diffusion is 30 ohms/square. Both wafers are screen-printed with an etching mask on the emitter and dried. One piece was etched in the mixed solution of hydrofluoric acid and nitric acid without additives for 150 seconds, and the other piece was etched in the mixed solution of hydrofluoric acid and nitric acid with additives for 150 seconds. The two silicon wafers were cleaned with a dilute alkaline solution and the etching mask was removed. Prepared into a selective emitter structure. After testing, the sheet resistance of the silicon wafer after etching in the etching solution without additives is between 40 and 80 ohms/square, while the sheet resistance of the silicon wafer after etching in the etching solution with sodium nitrite is 85 to 91 Between the two prepared selective emitter batteries, the open circuit voltage of the battery after corrosion in the additive-added corrosion solution is 22mV higher, and the short-circuit current density is increased by 2mA/cm 2 , The conversion efficiency is increased by 0.47% (absolute value).
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Description & Claims & Application Information

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