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Super junction vertical double-diffused metal-oxide semiconductor field-effect transistor with P-type buried layer

A vertical double-diffusion, semiconductor tube technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as reducing on-resistance, and achieve the effect of reducing switching loss and accelerating switching speed.

Inactive Publication Date: 2012-08-22
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When turned on, the on-resistance of this highly doped device is significantly reduced

Method used

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  • Super junction vertical double-diffused metal-oxide semiconductor field-effect transistor with P-type buried layer
  • Super junction vertical double-diffused metal-oxide semiconductor field-effect transistor with P-type buried layer
  • Super junction vertical double-diffused metal-oxide semiconductor field-effect transistor with P-type buried layer

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Embodiment Construction

[0012] A superjunction vertical double-diffused metal oxide semiconductor transistor with a P-type buried layer, comprising: an N-type doped silicon substrate 1 serving as a drain region, an N-type doped silicon epitaxial layer 2, and a superjunction structure 3. The N-type doped silicon epitaxial layer 2 is arranged on the N-type doped silicon substrate 1, and the super junction structure 3 is arranged on the N-type silicon-doped semiconductor region 2, and the described super junction structure 3 is composed of mutually spaced P The P-type column 4 and the N-type column 5 are composed of a first P-type doped semiconductor region 6 on the P-type column, and the first P-type doped semiconductor region 6 is located in the N-type doped epitaxial layer 2. In the first P-type A second P-type heavily doped semiconductor contact region 13 and an N-type heavily doped semiconductor source region 12 are provided in the N-type doped semiconductor region 6, and a gate oxide layer 8 is arr...

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Abstract

The invention relates to a super junction vertical double-diffused metal-oxide semiconductor field-effect transistor with P-type buried layers, which comprises an N-type doped silicon substrate which is also used as a drain region, an N-type doped silicon epitaxial layer and a super junction structure. The N-type doped silicon epitaxial layer is arranged on the N-type doped silicon substrate. The super junction structure is arranged in an N-type silicon doped semiconductor region. The super junction structure comprises P-type pillars and N-type pillars which are arranged at intervals. A first P-type doped semiconductor region is formed on each P-type pillar and is arranged in the N-type doped silicon epitaxial layer. A second P-type highly-doped semiconductor contact area and an N-type highly-doped semiconductor source region are arranged in the first P-type doped semiconductor region. The super junction vertical double-diffused metal-oxide semiconductor field-effect transistor with P-type buried layers is characterized in that the surfaces of the N-type pillars are respectively provided with lightly-doped P-type buried layers and the P-type buried layers are arranged in the N-type pillars.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to a fast-switching high-voltage power device made of silicon, especially suitable for superjunction vertical double-diffused metal oxide field-effect transistors made of silicon (Superjunction VDMOS, that is, super junction VDMOS, all of which are abbreviated as super junction VDMOS. ), more specifically, relates to a fast-switching, ultra-low-loss silicon superjunction VDMOS structure. Background technique [0002] At present, power devices are more and more widely used in daily life, production and other fields, especially power metal oxide semiconductor field effect transistors, because they have faster switching speed, smaller drive current, and wider safe operating area , so it has been favored by many researchers. Nowadays, power devices are developing towards higher working voltage, higher working current, lower on-resistance, faster switching speed and in...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06
Inventor 钱钦松祝靖张龙杨卓孙伟锋陆生礼时龙兴
Owner SOUTHEAST UNIV
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