SiC epitaxial wafer and method for manufacturing same

A technology of epitaxial wafers and manufacturing methods, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, crystal growth, etc., can solve problems such as heterogeneous polytype, stacking defects, dislocations, etc.

Active Publication Date: 2012-09-05
RESONAC CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0026]However, if the damage and grinding marks (scratches) caused by grinding remain on the surface of the substrate after gas etching, there is the following problem: Different polytypes, dislocations, stacking defects, etc. will be introduced into the epitaxial film on the surface of the substrate
Therefore, if the gas etching time is extended to increase the etching amount in order to avoid this problem, there is a problem that surface reconstruction occurs on the substrate surface this time, and a step beam is generated on the substrate surface before the start of epitaxial growth.
[0029] In this way, in the methods currently generally practiced as represented by Patent Documents 2 and 3, when the growth of the SiC epitaxial film is started, the raw material gas is not simultaneously carried out. Supply of C3H8 gas and SiH4 gas

Method used

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  • SiC epitaxial wafer and method for manufacturing same
  • SiC epitaxial wafer and method for manufacturing same
  • SiC epitaxial wafer and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1）

[0196] An epitaxial layer of SiC was formed on the Si face of a 4H-SiC single crystal substrate inclined at an off angle of 4°.

[0197] In this example, no convex processing was performed on the 4H-SiC single crystal substrate.

[0198] In the grinding process, the mechanical grinding before CMP uses abrasive grains with a diameter of 5 μm or less, and the processing pressure is 350 g / cm 2 conduct. In addition, CMP was carried out for 30 minutes using silica particles with an average particle diameter of 10 to 150 nm as abrasive particles, an abrasive slurry containing sulfuric acid as an inorganic acid, and having a pH of 1.9 at 20° C. Thereby, the lattice disorder layer on the surface is made to be 3 nm or less.

[0199] After the polished substrate is RCA washed, it is introduced into the growth device. Furthermore, the so-called RCA cleaning is a wet cleaning method generally used for Si wafers. It uses a solution mixed with sulfuric acid-ammonia-hydrochloric acid and ...

Embodiment 2）

[0211] A SiC epitaxial wafer was produced under the same production conditions as in Example 1 except that the growth process was performed at a growth rate of 4 μm / hour for 2.5 hours.

[0212] For the SiC epitaxial wafer produced, an optical surface inspection device (Candela CS20 manufactured by KLA-Tencor Corporation), a photoluminescence imaging device (PLI-100 manufactured by Photondezin Corporation) and a wide-range observation type AFM (manufactured by Keyence Corporation) were used. Nanoscale Hybrid Microscope VN-8000) for measurement and evaluation.

[0213] Triangular defect density is 0.4 / cm 2 , the laminated defect density is 0.1 / cm 2 .

[0214] In addition, no step bundles were observed.

[0215] All are 1 piece / cm 2 Hereinafter, an extremely high-quality epitaxial film with a low defect density was also formed on the 4H-SiC single crystal substrate having a lower off angle of 1.2° than in Example 1.

[0216] [C-plane of 4H-SiC single crystal substrate with o...

Embodiment 3）

[0218] Using a multi-wire saw, slice the Si surface into a convex shape so that the radius of curvature of the convex part becomes 50 m, and implement the growth process for 2.5 hours at a growth rate of 4 μm / hour, under the same production conditions as in Example 1. Made SiC epitaxial wafers.

[0219] The obtained SiC epitaxial wafers were measured using an optical surface inspection device (Candela CS20 manufactured by KLA-Tencor Corporation) and a photoluminescence imaging device (PLI-100 manufactured by Photondezin Corporation), respectively. Figure 9 shown. Triangular defect density is 0.4 / cm 2 , the laminated defect density is 0.2 / cm 2 . All are 1 piece / cm 2 Next, an extremely high-quality epitaxial film with a low defect density was formed also on the Si surface of a 4H-SiC single crystal substrate with a low off-angle.

[0220] In addition, in the measurement of the optical surface inspection device (Candela CS20 manufactured by KLA-Tencor Corporation) and the w...

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Abstract

Disclosed is an SiC epitaxial wafer, which has reduced triangular defects and lamination defects, high carrier concentration uniformity and high film thickness uniformity, and is step-bunching-free. Also disclosed is a method for manufacturing the wafer. In the SiC epitaxial wafer, an SiC epitaxial layer is formed on a 4H-SiC single crystal substrate which is tilted by an off-angle of 0.4-5 DEG. The defect density of the triangular defects on the surface of the SiC epitaxial layer is 1 defect / cm2 or less.

Description

technical field [0001] The present invention relates to a SiC epitaxial wafer and a manufacturing method thereof, in particular to high-quality SiC epitaxial wafers with low defect density, high uniformity of film thickness and carrier density, and no step bunching (step bunching, step accumulation, step bunching) Wafer and method of manufacturing the same. [0002] this application claims the priority based on the patent application 2009-283113 for which it applied to Japan on December 14, 2009, The content is used for this application. Background technique [0003] As a response to the problem of global warming, improvements in energy-saving technologies are required. In the process of many technical projects being proposed, power electronics technology that reduces energy loss during power conversion is at the position of the backbone technology. Power electronics has traditionally used silicon (Si) semiconductors to improve performance through technical improvements, b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C23C16/02C23C16/42C30B25/16C30B25/20H01L21/205
CPCC30B25/186C30B29/36H01L21/02378H01L21/02433H01L21/02529H01L21/0262H01L21/02661C30B25/02C30B25/16C30B25/165H01L29/045H01L29/1608C30B25/20C23C16/325H01L21/20
Inventor 武藤 大祐百瀬 賢治小田原 道哉
Owner RESONAC CORPORATION
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