Manufacturing method of semiconductor device
A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of conductivity variation, transistor electrical characteristics variation, etc., and achieve electrical characteristics variation suppression, good electrical characteristics, and reliability. high sex effect
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Embodiment approach 1
[0176] In this embodiment, refer to Figure 1A to Figure 1E One aspect of a semiconductor device and a method of manufacturing the semiconductor device will be described. In this embodiment mode, a transistor having an oxide semiconductor layer is shown as an example of a semiconductor device.
[0177] The structure of the transistor is not particularly limited, and for example, a staggered type and a planar type of a top-gate structure or a bottom-gate structure can be used. In addition, the transistor may have a single gate structure in which one channel formation region is formed, a double gate structure in which two channel formation regions are formed, or a triple gate structure in which three channel formation regions are formed. grid structure. In addition, a double gate type having two gate electrode layers arranged above and below the channel region with a gate insulating layer interposed therebetween may also be employed.
[0178] Such as Figure 1E As shown, the ...
Embodiment approach 2
[0244] In this embodiment, refer to Figure 2A to Figure 2E Another embodiment of the semiconductor device and the manufacturing method of the semiconductor device will be described. Parts that are the same as those in the above-mentioned embodiment or parts and steps that have the same functions as those in the above-mentioned embodiment can be performed in the same manner as in the above-mentioned embodiment, and redundant description will be omitted. In addition, detailed descriptions of the same parts are omitted.
[0245] Figure 2A to Figure 2E The illustrated transistor 440 is an example of a top-gate transistor.
[0246] Such as Figure 2E As shown, the transistor 440 includes a crystalline oxide semiconductor layer 403 , a source electrode layer 405 a , a drain electrode layer 405 b , a gate insulating layer 402 , and a gate electrode layer 401 on a substrate 400 having an insulating surface provided with an insulating layer 436 . An oxide insulating layer 407 is ...
Embodiment approach 3
[0274] In this embodiment, refer to Figure 3A to Figure 3E Another embodiment of the semiconductor device and the manufacturing method of the semiconductor device will be described. Parts that are the same as those in the above-mentioned embodiment or parts and steps that have the same functions as those in the above-mentioned embodiment can be performed in the same manner as in the above-mentioned embodiment, and redundant description will be omitted. In addition, detailed descriptions of the same parts are omitted.
[0275] Figure 3A to Figure 3E The illustrated transistor 430 is an example of a bottom-gate transistor.
[0276] The transistor 430 includes a gate electrode layer 401, a gate insulating layer 402, a source electrode layer 405a, a drain electrode layer 405b, and a crystalline oxide semiconductor layer 403 on a substrate 400 having an insulating surface. In addition, the oxide insulating layer 407 is formed covering the transistor 430 .
[0277] Figure 3A...
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Abstract
Description
Claims
Application Information
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