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Method for improving MOSFETs nickel base silicide heat stability

A technology of thermal stability and silicide, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., to achieve the effect of not deteriorating device performance and improving thermal stability

Active Publication Date: 2015-01-14
SOI MICRO CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] All in all, the thermal stability of nickel-based metal silicides widely used in the existing MOSFETs manufacturing technology needs to be effectively improved, but the existing improvement technology is not enough to be fully competent

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  • Method for improving MOSFETs nickel base silicide heat stability
  • Method for improving MOSFETs nickel base silicide heat stability
  • Method for improving MOSFETs nickel base silicide heat stability

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Embodiment Construction

[0015] The features and technical effects of the technical solution of the present invention will be described in detail below with reference to the accompanying drawings and in combination with schematic embodiments, and a method for effectively improving the thermal stability of nickel-based metal silicides is disclosed. It should be pointed out that similar reference numerals represent similar structures, and the terms "first", "second", "upper", "lower" and the like used in this application can be used to modify various device structures or manufacturing processes . These modifications do not imply spatial, sequential or hierarchical relationships of the modified device structures or fabrication processes unless specifically stated.

[0016] Figure 1 to Figure 7 It is a schematic cross-sectional view of each step of the method for effectively improving the thermal stability of nickel-based metal silicide according to the present invention.

[0017] first refer to attache...

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Abstract

The invention discloses a method for effectively improving nickel base metal silicide heat stability. The method comprises the following steps: forming an amorphous layer in a heavy doping drain and source area; carrying out doping ion implantation on the amorphous layer; annealing so as to form a recrystallization layer, wherein the doping ions are fixed in the recrystallization layer; forming the nickel base metal silicide on the recrystallization layer. Because a technology, which includes steps of carrying out pre-amorphization, reinjecting doping ions, then annealing and carrying out recrystallization, is used, the injected doping ions are similarly '' fixed '' or '' froze '' in the recrystallization layer. During a nickel base metal silicide formation process, the doping ions are not entered into a channel region, wherein the situation of entering into the channel region is generated because of a tunnel effect which is frequently generated during the ion implantation. Therefore, the nickel base metal silicide heat stability can be greatly increased and device performance can not be deteriorated.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor device, in particular to a method for improving the thermal stability of MOSFETS nickel-based silicide. Background technique [0002] The continuous increase of IC integration requires the continuous reduction of device size, but the electrical operating voltage sometimes remains unchanged, which makes the electric field strength in the actual MOS device continue to increase. The high electric field brings a series of reliability problems, which degrades the performance of the device. For example, parasitic series resistance between the source and drain regions of a MOSFET will cause the equivalent operating voltage to drop. [0003] Since nickel-based silicides usually have lower resistance (such as 10.5-15μΩ / cm), lower silicon consumption (less silicon is consumed when nickel reacts with substrate silicon to form nickel-based silicide), and it is compatible with silicon substrates. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336
Inventor 罗军赵超钟汇才李俊峰
Owner SOI MICRO CO LTD
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