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A resistance random access memory and a preparation method thereof

A technology of resistive memory and memory, applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve the problems of increasing storage unit area, unfavorable storage density, and reducing device integration, so as to improve storage density, increase area, The effect of improving integration

Inactive Publication Date: 2012-09-26
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, this resistive variable memory structure with an external triode or diode will increase the area of ​​the memory unit, which is not conducive to improving the storage density and reducing the integration of the device.

Method used

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  • A resistance random access memory and a preparation method thereof
  • A resistance random access memory and a preparation method thereof
  • A resistance random access memory and a preparation method thereof

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Embodiment Construction

[0038] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0039] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0040] Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the gener...

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Abstract

The embodiment of the invention discloses a resistance random access memory and a preparation method thereof. The access memory comprises a bottom electrode, a first resistance random function layer above the bottom electrode, a second resistance random function layer above the first resistance random function layer, and a top electrode above the second resistance random function layer, wherein the first resistance random function layer has an majority carrier type opposite to that of the second resistance random function layer. Through the first resistance random function layer and the second resistance random function layer with opposite majority carrier types, pn junction is formed in the resistance random function layers of the access memory. Without an external rectified diode or triode, resistance random is realized, crosstalk is curbed and a memory cell is not expanded. Therefore memory density is effectively improved and integrated level of the memory is enhanced.

Description

technical field [0001] The present invention relates to a semiconductor device and its manufacturing technology, more specifically, to a resistive variable memory and its manufacturing method. Background technique [0002] With the popularity of portable personal devices, non-volatile memory has gradually become the focus of research and development in the semiconductor industry due to its advantages of maintaining a memory state and operating with low power consumption when there is no power supply. At present, the non-volatile memory on the market is still dominated by flash memory (flash). Due to shortcomings such as insufficient time, the focus of research and development has gradually shifted to new non-volatile memories that can replace flash memory, including ferroelectric memory (FeRAM), magnetic memory (MRAM), phase change memory (PRAM) and resistive memory (RRAM). Wait. [0003] Since 2000, the Ignatiev research group of the University of Houston reported that th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24
Inventor 刘明张康玮龙世兵谢常青刘琦吕杭炳
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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