Device and method for producing nuisanceless bean sprouts by adopting extremely-low-frequency pulsed electric field

A technology of pulsed electric field and extremely low frequency, which is applied to the device for rapid production of pollution-free sprouts, the device for producing pollution-free sprouts, and the field of production of pollution-free sprouts. It can solve the problems of chemical pollution, low yield, and slow growth of sprouts. , to achieve the effects of neat and rapid growth, increased yield, and avoid mildew

Inactive Publication Date: 2012-10-03
XIAN UNIV OF TECH
View PDF6 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a device for producing pollution-free sprouts using extremely low-frequency pulsed electric

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method for producing nuisanceless bean sprouts by adopting extremely-low-frequency pulsed electric field
  • Device and method for producing nuisanceless bean sprouts by adopting extremely-low-frequency pulsed electric field

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The seeds of Zhonglv No. 2 mung bean were treated with 0.2% HgCl 2 Disinfect for 2 minutes, fully imbibition in distilled water after washing. Select uniform seeds and place them evenly in a petri dish. Place a piece of medium-speed filter paper at the bottom of the petri dish, add an appropriate amount of distilled water, and place them in a constant temperature incubator (25±0.2°C) for dark cultivation. Add distilled water regularly every day.

[0037] Place Lubai mung bean seeds in figure 1 The two plates shown are treated in the direction of the field strength downward, 8h per day, and 5 consecutive days of treatment, the direction of the electric field is downward, the electric field strength is 100kV / m, the pulse frequency is 1Hz, and the pulse width is 50ms. The same seeds were also taken as a control group and cultured under the same conditions, except that they were not treated with pulsed electric field, all conditions were the same.

Embodiment 2

[0039] The seeds of Zhonglv No. 2 mung bean were treated with 0.2% HgCl 2 Disinfect for 2 minutes, fully imbibition in distilled water after washing. Select uniform seeds and place them evenly in a petri dish. Place a piece of medium-speed filter paper at the bottom of the petri dish, add an appropriate amount of distilled water, and place them in a constant temperature incubator (25±0.2°C) for dark cultivation. Add distilled water regularly every day.

[0040] Place Lubai mung bean seeds in figure 1 The two plates shown are treated in the direction of the field strength downward, 8 hours per day, and 5 consecutive days of treatment. The direction of the electric field is downward, the electric field strength is 500kV / m, the pulse frequency is 0.1Hz, and the pulse width is 100ms. The same seeds were also taken as a control group and cultured under the same conditions, except that they were not treated with pulsed electric field, all conditions were the same.

Embodiment 3

[0042] The seeds of Zhonglv No. 2 mung bean were treated with 0.2% HgCl 2 Disinfect for 2 minutes, fully imbibition in distilled water after washing. Select uniform seeds and place them evenly in a petri dish. Place a piece of medium-speed filter paper at the bottom of the petri dish, add an appropriate amount of distilled water, and place them in a constant temperature incubator (25±0.2°C) for dark cultivation. Add distilled water regularly every day.

[0043] Place Lubai mung bean seeds in figure 1The two plates shown are treated in the direction of the field strength downward, each treatment is 0.5h, and after the treatment is stopped for 0.5h, the treatment is continued for 0.5h, and the treatment is repeated intermittently for 5 consecutive days. The intensity is 1000kV / m, the pulse frequency is 1Hz, and the pulse width is 1ms. The same seeds were also taken as a control group and cultured under the same conditions, except that they were not treated with pulsed electric...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a device and method for producing nuisanceless bean sprouts by adopting an extremely-low-frequency pulsed electric field. The device comprises an extremely-low-frequency high-voltage pulse generator, wherein two poles of the extremely-low-frequency high-voltage pulse generator are respectively connected with a copper plate; the two parallel copper plates are used as electrodes; and a nonmetal bracket for holding seeds is arranged between the two copper plates. The method comprises the following steps of: cleaning and sterilizing bean seeds or peanut seeds to be planted, killing surface microorganisms, soaking for 3-24 hours in water, putting water-absorbed and germinating seeds in the extremely-low-frequency pulsed electric field for treatment; and culturing the treated seeds under the normal temperature till to be harvested, and obtaining the nuisanceless bean sprouts. The device and method disclosed by the invention have the advantages that the obtained seeds treated and cultured in the pulsed electric field germinate quickly, the fresh weight, the sprout length and the like of seedlings are greatly different from those of the seedlings which are not treated by the pulsed electric field, and the quality and the yield are greatly increased.

Description

technical field [0001] The invention belongs to the field of biological electromagnetic technology, and relates to a device for rapidly producing pollution-free sprouts, in particular to a device for producing pollution-free sprouts using an extremely low-frequency pulsed electric field, and the invention also relates to a device for producing pollution-free sprouts using the above-mentioned device method. Background technique [0002] Sprouts, including various bean sprouts such as mung bean sprouts and soybean sprouts, and peanut sprouts, are not only rich in nutrition, good in taste, but also low in price. They are one of the vegetables commonly used by people. [0003] Due to the low output, uneven germination, and unattractive appearance of conventional production methods, in order to increase product output and make the appearance attractive, and improve profits, some patented techniques and methods for sprout production have appeared, such as application number 201010...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): A01G31/02A01C1/00A01G31/00A23L1/202A23L11/20
CPCY02P60/21
Inventor 习岗刘锴杨运经刘青高宇
Owner XIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap