Low-threshold voltage diode
A technology of turning on voltage and diodes, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of affecting the frequency characteristics of devices, increasing turn-off losses, disadvantages, etc., to reduce leakage current, increase forward current, and improve impact. The effect of breakdown voltage
Inactive Publication Date: 2014-12-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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Problems solved by technology
The intrinsic region can also help the device to withstand a good voltage, but a large number of minority carriers in the intrinsic region is not good for the device when it is turned off. Reverse extraction of the minority carriers in the intrinsic region will affect the frequency characteristics of the device and increase the turn-off loss.
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[0021] Adopting a low turn-on voltage diode of the present invention can realize smaller forward turn-on voltage, low turn-on voltage drop, high reverse breakdown voltage, smaller reverse leakage current, and good reverse recovery characteristics . With the development of semiconductor technology, more high-voltage and low-power consumption devices can be manufactured by adopting the invention.
[0022] A low turn-on voltage diode whose basic structure is as figure 1 shown, including N + Substrate 2, located at N + The metallized cathode 1 on the back of the substrate 2 and the N + N on the front side of substrate 2 － Epitaxial layer 3; N － The surface of the epitaxial layer 3 is a metallized anode 8, N － There is a P-type heavily doped region 6 on both sides of the top of the epitaxial layer 3, and an N-type heavily doped region 7 next to the two P-type heavily doped regions 6; the metallized anode 8 is located on the top layer of the device, covering all the P Type he...
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The invention discloses a low-threshold voltage diode, and belongs to the technical field of semiconductor devices. A depletion region of a PN-junction diode is reduced and enlarged to control the turning-on and turning-off of the diode, so that the device has a current channel under low forward voltage. An anode ohm contact structure is introduced, so that the device can generate forward current during forward conduction under the low forward voltage; when anode voltage is raised to enable an anode Schottky structure to be turned on, the forward current can be raised; and when the raised anode voltage is sufficient to turn on a PN junction, the forward current of the PN junction can further raise the forward current of the diode. During the reverse conduction of the device, a conducting channel is pinched off under low reverse voltage, a lightly-doped epitaxial layer can bear raised reverse voltage, and the anode Schottky structure can help to reduce reverse leakage current. The low threshold voltage, high forward current, low reverse leakage current and good reverse recovery characteristic of the diode can be realized.
Description
technical field [0001] The invention belongs to the technical field of semiconductor devices and relates to a low turn-on voltage diode. Background technique [0002] In the field of electronics, diodes are one of the most commonly used basic electronic components. PN junction diodes and Schottky diodes are the main two types of traditional rectifier diodes. Among them, the PN junction diode has a large turn-on voltage, but it has good stability and can work at high voltage. It is a minority carrier device and has a small leakage current. However, due to the minority carrier storage effect, the device has a long turn-off time and a large turn-off loss. . [0003] Schottky diodes are not made by using the principle of P-type semiconductor and N-type semiconductor contact to form a PN junction, but by using the principle of a metal-semiconductor junction formed by metal and semiconductor contact, so the forward turn-on voltage is small. Since most carriers conduct electrici...
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IPC IPC(8): H01L29/47H01L29/45H01L29/06H01L29/861
Inventor 任敏张蒙魏进李巍李泽宏张金平张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA