Flip-chip single-face three-dimensional circuit fabrication method by etching-first and packaging-second and packaging structure of flip-chip single-face three-dimensional circuit

Abstract

The invention relates to a flip-chip single-face three-dimensional circuit fabrication method by etching-first and packaging-second and a packaging structure of a flip-chip single-face three-dimensional circuit. The method includes following steps: picking a metal substrate, pre-coppering the surface of the metal substrate, sticking photo-resistant films, removing part of the photo-resistant films on the back of the metal substrate, electroplating an inert metal circuit layer, electroplating a metal circuit layer, removing the photo-resistant films, packaging, processing a hole on the surface of plastic-packaged materials, grooving, electroplating conductive metal, pretreating before metallization, electroplating a metal circuit layer, chemically etching, electroplating a metal circuit layer, mounting a chip and filling at the bottom of the chip, cleaning, balling and cutting to obtain a finished product. The flip-chip single-face three-dimensional circuit fabrication method by etching-first and packaging-second and the packaging structure of the flip-chip single-face three-dimensional circuit have the advantages that fabrication cost is lowered, safety and reliability of a packaged body is improved, environmental pollution is reduced, and design and fabrication of high-density circuits can be truly realized.

Description

technical field [0001] The invention relates to a single-sided three-dimensional circuit chip flip-chip manufacturing method and packaging structure thereof. It belongs to the technical field of semiconductor packaging. Background technique [0002] The manufacturing process flow of the traditional high-density substrate package structure is as follows: [0003] Step 1, see Figure 57 , take a substrate made of glass fiber material, [0004] Step two, see Figure 58 , opening holes at desired locations on the fiberglass substrate, [0005] Step three, see Figure 59 , coated with a layer of copper foil on the back of the glass fiber substrate, [0006] Step 4, see Figure 60 , fill the conductive material in the position where the glass fiber substrate is punched, [0007] Step five, see Figure 61 , coated with a layer of copper foil on the front of the glass fiber substrate, [0008] Step six, see Figure 62 , coated with a photoresist film on the surface of the ...

AI Technical Summary

Problems solved by technology

[0019] 3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the safety capability or reliability level of reliability;

[0020] 4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (etching factor: minimum The best manufacturing capability is that the etching gap is approximately equal to the thickness of the object to be etched, see Figure 69 ), so it is impossible to truly design and manufacture high-density circuits;

[0022]6. Also because the entire substrate material is made of glass fiber, the thickness of the glass fiber layer is obviously increased by 100~150μm, and it cannot be really ultra-thin encapsulation;

[0023]7. Due to the large difference in material characteristics (expansion coefficient) of the traditional glass fiber plus copper foil technology, it is easy to cause stress deformation in the harsh environment process, directly Affects the accuracy of component loading and the adhesion and reliability of components and substrates

Images