Cleaning method of plasma processing apparatus and plasma processing method

Abstract

The invention provides a plasma processing method and a cleaning method of a plasma processing apparatus, capable of preventing particles generated from a silicon-containing member for forming a plasma generating chamber from adhering to a processing target substrate. The plasma processing apparatus in which a cleaning method is performed includes a plasma generating chamber, having a silicon-containing member, for generating therein plasma by exciting a processing gas; a plasma processing chamber communicating with the plasma generating chamber via a partition member; and a high frequency antenna, having a planar shape, provided at an outside of a dielectric window of the plasma generating chamber. The cleaning method includes exciting a hydrogen-containing processing gas into plasma in the plasma generating chamber, introducing hydrogen radicals in the plasma into the plasma processing chamber through the partition member, performing a plasma process on a processing target substrate by allowing the hydrogen radicals to act on the processing target substrate, unloading the processing target substrate, and removing silicon-based deposits generated in the plasma generating chamber by introducing a tetrafluoride (tetrafluoromethane) gas into the plasma generating chamber.

Description

technical field [0001] The invention relates to a cleaning method of a plasma processing device and a plasma processing method. Background technique [0002] Currently, in the field of semiconductor device manufacturing and the like, a plasma processing apparatus using plasma is known as an apparatus for performing a film-forming process or an etching process on a substrate such as a semiconductor wafer. [0003] It is known that in the above-mentioned plasma processing apparatus, a hydrogen plasma is generated, and hydrogen radicals in the hydrogen plasma act on a substrate to be processed to perform ashing of a resist or a low-conductivity film. etching technique. In the case of using the plasma of hydrogen gas in this way, if a capacitively coupled plasma processing apparatus such as a parallel plate type is used, the electrodes are greatly damaged by the hydrogen plasma. Therefore, an inductively coupled plasma processing apparatus that generates inductively coupled pl...

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Problems solved by technology

Furthermore, when only atomic groups are moved and act on the substrate to be processed in the plasma generated in the plasma generation chamber which is longer in the longitudinal direction than in the lateral direction, the moving distance of the atomic groups becomes longer, and only the efficient atomic groups act on the processed substrate. substrate, it is difficult to perform efficient processing

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