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LED structure using AlGaInN quaternary material as quantum well and quantum barrier and manufacturing method thereof

A technology of LED structure and quantum well, which is applied in the field of optoelectronics and can solve the problems of limiting the optional range of materials and reducing the optional range.

Active Publication Date: 2014-12-10
吴江市民福电缆附件厂
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  • Application Information

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Problems solved by technology

Correspondingly, in order to achieve polarization matching between the AlGaInN quantum barrier and the quantum well, the optional range of its components (Al, Ga, In) becomes smaller, which limits the optional range of materials

Method used

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  • LED structure using AlGaInN quaternary material as quantum well and quantum barrier and manufacturing method thereof
  • LED structure using AlGaInN quaternary material as quantum well and quantum barrier and manufacturing method thereof
  • LED structure using AlGaInN quaternary material as quantum well and quantum barrier and manufacturing method thereof

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Embodiment Construction

[0011] Technical scheme of the present invention is as follows:

[0012] An LED structure using AlGaInN quaternary materials as quantum wells and quantum barriers, including a substrate layer followed by a nucleation layer, a buffer layer, an N-type conductive layer, a multi-quantum well layer and a P-type conductive layer, and on the N-type conductive layer On the top and on the P-type conductive layer are respectively ohmic contact layers; it is characterized in that the multiple quantum well layers are alternately grown Al with a thickness of 2-20nm x Ga 1-x-y In y N-well and Al with a thickness of 10-30nm u Ga 1-u-v In v N bases, the repetition period is 2-20, wherein, 0<x<1, 0<y<1; 0<u<1, 0<v<1.

[0013] The substrate layer is one of sapphire substrate or silicon carbide substrate.

[0014] The buffer layer is non-doped GaN with a thickness of 1 μm-100 μm, and the nucleation layer is GaN with a thickness of 10 nm-50 nm.

[0015] The N-type conductive layer is a Si-...

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Abstract

The invention relates to a LED structure using an AlGaInN quaternary material as a quantum well and a quantum barrier and a manufacturing method thereof. The LED structure comprises a nucleating layer, a buffer layer, a N-type conducting layer, a multi-quantum well layer and a P-type conducting layer which are successively on a substrate layer. Ohmic contact layers are on the N-type conducting layer and the P-type conducting layer respectively. The multi-quantum well layer is an AlxGal-x-yInyN well with a thickness of 2-20nm and an AluGal-u-vInvN barrier with the thickness of 10-30nm, wherein the AlxGal-x-yInyN well and the AluGal-u-vInvN barrier are alternatively grown. There are 2-20 repetition periods. According to the invention, a band gap of the AlGaInN quaternary material and a lattice constant possess a characteristic of a wide adjustable scope, through using the characteristic and changing composition of the Al and the In, a polarization charge density is adjusted. Therefore, total polarization charge generated by the AlGaInN well is matched with the total polarization charge of the AlGaInN barrier so as to eliminate a built-in electric field and increase quantum efficiency in the device.

Description

technical field [0001] The invention relates to an LED structure using AlGaInN quaternary material as a quantum well and a quantum barrier and a preparation method thereof, belonging to the field of optoelectronic technology. Background technique [0002] III V group wide band gap direct band gap semiconductor has a series of advantages such as wide band gap, high electron mobility, high thermal conductivity, high hardness, stable chemical properties, small dielectric constant and high temperature resistance, so it is used in high brightness blue It has a wide range of practical applications and huge market prospects in electronic power devices such as color light-emitting diodes, blue semiconductor lasers, and radiation-resistant, high-frequency, high-temperature, and high-voltage devices. GaN is the basic material of semiconductor Group III nitrides. It has a hard texture and extremely stable chemical properties. It does not react with acids and alkalis at room temperature...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/32H01L33/06H01L33/02H01L33/00
Inventor 王成新王强徐现刚李树强曲爽
Owner 吴江市民福电缆附件厂
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