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Chemical machinery polishing method for ultralow dielectric material

A technology of ultra-low dielectric materials and chemical machinery, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., to reduce damage and keep the dielectric constant constant

Active Publication Date: 2015-05-20
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] In order to solve the above problems, when using these low-resistance materials or low dielectric constant materials in the integrated circuit production process, it is necessary to find a solution to eliminate the damage to the low dielectric constant materials from CMP and other processes, but in actual There are still considerable barriers in the implementation process, and it is urgent to introduce new methods that can effectively improve the above-mentioned defects to solve the most important problems faced by low-resistance materials such as copper and / or low dielectric constant materials when used in integrated circuit production processes. question

Method used

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  • Chemical machinery polishing method for ultralow dielectric material
  • Chemical machinery polishing method for ultralow dielectric material
  • Chemical machinery polishing method for ultralow dielectric material

Examples

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Embodiment 1

[0041] Below to figure 2 The method flow shown is taken as an example, combined with the attached Figures 3A to 3K , to describe in detail a manufacturing process for back-end process integration that eliminates damage to low dielectric constant materials.

[0042] S100: Provide a base layer, and sequentially deposit a first dielectric barrier layer and a first dielectric layer on the base layer from bottom to top.

[0043] see Figure 3A , providing a base layer 300 on which a first dielectric barrier layer 301 and a first dielectric layer 302 are sequentially deposited from bottom to top.

[0044] S101: Process the surface of the first dielectric layer 302 by using a hydrocarbon gas plasma chemical vapor deposition process to form a first carbon layer 303 .

[0045] see Figure 3B and Figure 3C , treating the surface of the first dielectric layer 302 with a hydrocarbon gas plasma chemical vapor deposition process to form a hydrophobic and dense first carbon layer 303...

Embodiment 2

[0065] It has been mentioned in the background technology that when using these low-resistance materials or low dielectric constant materials in the integrated circuit production process, it is necessary to find a solution to eliminate the damage to the low dielectric constant materials from processes such as CMP, but There are still considerable barriers in the actual implementation process. The solution in Example 1 can reduce the damage to the ultra-low dielectric constant film caused by the abrasive liquid entering the hole in the dielectric layer during the CMP process, thereby reducing the damage caused by the through hole. The resulting electromigration failure problem. However, in the etching process used in step S102 of Embodiment 1, before the etching process is formed, it is usually necessary to deposit a patterned photoresist (not shown in the figure) on the first carbon layer 303, and patterned The photoresist is etched as a mask to make the first groove 3062 in t...

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Abstract

The invention provides a chemical machinery polishing method for ultralow dielectric material, which comprises the following steps of: processing the surface of a first dielectric layer by hydrocarbon gas to form a first carbon layer; forming a first groove in the first carbon layer, the first dielectric layer and a first medium barrier layer; carrying out chemical machinery polishing to first groove electroplated copper formed after a first diffusion barrier layer formed on the side wall of the first groove is subjected to metal deposition, and depositing a second medium barrier layer and a second dielectric layer; processing the surface of the second dielectric layer by the hydrocarbon gas to form a second carbon layer; forming a first through hole and a second groove; depositing a second diffusion barrier layer; carrying out metal filling to the first through hole and the second groove on the second diffusion barrier layer; carrying out the chemical machinery polishing technology to the above structure; and stopping on the second carbon layer. The chemical machinery polishing method for the ultralow dielectric material, which is disclosed by the invention, is a surface processing method for reducing loss generated on the ultralow dielectric constant film by the chemical machinery polishing.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a chemical mechanical polishing method for ultra-low dielectric materials, which is a surface treatment method for reducing the loss caused by chemical mechanical polishing to ultra-low dielectric constant films. Background technique [0002] With the continuous advancement of semiconductor integrated circuit process technology, when semiconductor devices are reduced to a deep sub-micron range, the resistance (R) and capacitance (C) in the interconnection are prone to parasitic effects, resulting in the time delay of metal connection transmission (RC time delay) and signal crosstalk. Therefore, a high-performance integrated circuit chip needs as low as possible the signal delay and signal crosstalk of the wiring capacitance resistance. For this reason, low-resistance materials such as copper metal lines and interlayers and interlines of wiring are fi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311
Inventor 张文广徐强郑春生陈玉文
Owner SHANGHAI HUALI MICROELECTRONICS CORP