Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Optimization design method for extreme ultraviolet lithographic projection objective lens

A technology of extreme ultraviolet lithography and projection objective lens, which is applied in the direction of microlithography exposure equipment, optics, optical components, etc., and can solve problems such as inability to guarantee optical performance and blind design

Active Publication Date: 2014-05-07
BEIJING INSTITUTE OF TECHNOLOGYGY
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the EUVL projection objective, the number of mirrors needs to be strictly controlled. One optimization of the saddle point construction method needs to introduce two mirrors, and it cannot guarantee good optical performance. It is blind for the design of the EUVL projection objective

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Optimization design method for extreme ultraviolet lithographic projection objective lens
  • Optimization design method for extreme ultraviolet lithographic projection objective lens
  • Optimization design method for extreme ultraviolet lithographic projection objective lens

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0053] First of all, it needs to be declared: the ray tracing and damped least squares method in the optimization step of the present invention can be realized by using commercial optical design software CODEV and zemax, and the implementation example of the present invention is realized by using the optical design software CODEV.

[0054] The EULV projection objective adopts the design of coaxial components and off-axis field of view. The field of view is an off-axis annular field of view, that is, a part of a concentric ring with the center on the optical axis, the field of view width FW is 1-2mm, the chord length CL is 26mm, and the chord angle is less than or equal to 60°, such as figure 2 As shown, there are four field of view points evenly distributed on the width of the field of view on the meridian plane, among which F1 is the highest field of view point, F4 is the lowest field of view point, and there are two lowest field of view points outside the meridian plane, bec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an optimization design method for an extreme ultraviolet lithographic projection objective lens. The optimization design method comprises the following steps of: judging whether the projection objective lens has optimizable potential, and if the projection objective lens has the optimizable potential, setting an optimization boundary condition, wherein the boundary condition comprises telecentric limitation, aspherical degree limitation, distance limitation and blocking-free space limitation to each lens; setting an optimizable variable of the projection objective lens; and optimizing the optimizable variable of the projection objective lens under the boundary condition by using the damped least square method until the value hole on an ideal image side of the projection objective lens and a shot image can meet the requirement under the set boundary condition. According to the optimization design method, parameters of the projection objective lens are optimized by setting the optimization boundary condition comprising a blocking-free space and the like, so that the optimized projection objective lens can meet the demand of a user; and light rays cannot be blocked.

Description

technical field [0001] The invention relates to an optimal design method of an extreme ultraviolet lithography projection objective lens, belonging to the technical field of optical design. Background technique [0002] In the VLSI manufacturing process, it is necessary to use a high-precision projection objective lens to accurately scale the pattern on the mask to the silicon wafer covered with photoresist. The current deep ultraviolet lithography technology uses a laser light source with a wavelength of 193nm, assisted by off-axis illumination, phase shift mask, optical edge effect correction and other resolution enhancement technologies, which can meet the industrialization requirements of the 45nm technology node, but for 32nm or more To meet the industrialization needs of high-tech nodes, the semiconductor industry generally places its hopes on extreme ultraviolet lithography technology. The wavelength of the extreme ultraviolet light source is about 11-15nm, which is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G02B17/08
Inventor 李艳秋刘菲
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com