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Optical-band wave absorber

A wave absorber and optical band technology, applied in the field of optical devices, can solve the problems of narrow working frequency band, limited application, and no reports yet, and achieve the effects of small size, easy integration, and compact structure

Inactive Publication Date: 2012-11-14
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The wave-absorbing effect of the new wave-absorbing materials currently proposed mainly depends on the electromagnetic resonance between the upper and lower layers, so the working frequency band is extremely narrow, which greatly limits their applications in the fields of thermal radiation detection, solar energy utilization, and stealth materials. application
Secondly, their polarization-independent properties are suitable for linearly polarized electromagnetic waves, while absorbing materials for circularly polarized electromagnetic waves have not been reported, which are widely used in communications, sensing, and military detection.
In addition, these studies mainly focus on the microwave, titanium hertz and far infrared frequency bands, while there are few reports on new absorbing materials working in the visible light and infrared bands.

Method used

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  • Optical-band wave absorber
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1: 10 is deposited on the quartz glass substrate 6 A uniformly distributed helical metal wire grid unit, the metal helix diameter DW is 20 nanometers, the vertical projection of the metal helix is ​​circular, the circular diameter DH is 100 nanometers, and the effective number of turns NP of the metal helix is ​​equal to 3, The pitch P is 300 nanometers, the metal wire grid units are arranged in a square, and the metal helix chirality of each metal wire grid unit is opposite to that of the metal helix chirality of the four metal wire grid units adjacent up, down, left, and right. The pitch SG of each metal wire grid unit is equal to 170 nanometers.

[0029] figure 2 Shown is the optical characteristic curve of embodiment 1, and the characteristic curves of left-handed circularly polarized light and right-handed circularly polarized light are exactly the same, so figure 2 Only the characteristic curves for left-handed circularly polarized light are plotted. ...

Embodiment 2

[0030] Embodiment 2: 10 is deposited on the quartz glass substrate 6 A uniformly distributed helical metal wire grid unit, the metal helix diameter DW is 20 nanometers, the vertical projection of the metal helix is ​​circular, the circular diameter DH is 100 nanometers, and the effective number of turns NP of the metal helix is ​​equal to 2, The pitch P is 100 nanometers, each metal wire grid unit is arranged in a square, and the helical chirality of the metal helix of each metal wire grid unit is opposite to that of the metal helix of the four adjacent metal wire grid units. The pitch SG of each metal wire grid unit is equal to 170 nanometers.

[0031] image 3 Shown is the optical characteristic curve of embodiment 2, and the characteristic curves of left-handed circularly polarized light and right-handed circularly polarized light are exactly the same, so image 3 Only the characteristic curves for left-handed circularly polarized light are plotted. In the figure, the cu...

Embodiment 3

[0032] Embodiment 3: 5×10 is deposited on the quartz glass substrate 6A uniformly distributed helical metal wire grid unit, the metal helix diameter DW is 20 nanometers, the vertical projection of the metal helix is ​​circular, the circular diameter DH is 200 nanometers, and the effective number of turns NP of the metal helix is ​​equal to 3, The pitch P is 300 nanometers, the metal wire grid units are arranged in a square, and the metal helix chirality of each metal wire grid unit is opposite to that of the metal helix chirality of the four metal wire grid units adjacent up, down, left, and right. The pitch SG of each metal wire grid unit is equal to 210 nanometers.

[0033] Figure 4 Shown is the optical characteristic curve of embodiment 3, and the characteristic curves of left-handed circularly polarized light and right-handed circularly polarized light are exactly the same, so Figure 4 Only the characteristic curves for left-handed circularly polarized light are plotte...

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Abstract

The invention discloses an optical-band wave absorber belonging to an optical device and aims to provide the optical-band wave absorber which has wave absorbing characteristics irrelevant to polarization in wide band on the wave band from visible light to near infrared wave and has the following characteristics of small device size, compact structure and easiness for integration. N evenly distributed metal grid units are deposited on a quartz glass base plate, wherein each metal grid unit is composed of three metal helical lines which have the same helical chirality and circular vertical projection; each metal grid unit is arranged like a square; and the helical chirality of each metal grid unit is inverse to the helical chirality of four metal grid units close to the upper side, the lower side, the left side and the right side of the metal grid unit. The optical-band wave absorber has the characteristics of small device size, compact structure and easiness for integration, is capable of overlapping the wideband wave absorbing from the visible light to the near infrared wave, has the wave absorbing characteristics irrelevant to polarization, and is suitable for the fields such as thermal radiation detection, solar energy use, light decay, stealth material, and the like.

Description

technical field [0001] The invention belongs to optical devices, in particular to an optical band wave absorber. Background technique [0002] Absorbing material is a material related to optics and microwave fields. It has been widely used in the fields of electromagnetic shielding, detection and stealth materials. Traditional absorbing materials mainly include the following: ferrite, metal powder, barium titanate, silicon carbide, graphite, and conductive fibers. The main goal of traditional absorbing materials is strong absorption, but they usually have the characteristics of narrow absorption frequency band and high density. New wave-absorbing materials include nanomaterials, polycrystalline iron fibers, "chiral" materials, etc. The goal is to meet the characteristics of "thin, wide, light, and strong", that is, (1) in the working frequency band, make the incident The electromagnetic wave inside the material is absorbed by rapid loss as thin as possible; (2) achieve bet...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/00
Inventor 赵茗陆泽钦杨振宇
Owner HUAZHONG UNIV OF SCI & TECH
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