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Transparent conductive thin film

A technology of transparent conductive film and suppression layer, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problem of increasing the square resistance of OMO conductive film, and achieve the effect of reducing resistance and the relationship between temperature and time

Inactive Publication Date: 2015-04-15
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These will rapidly increase the sheet resistance of the OMO conductive film

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A kind of transparent conductive film, its cross-sectional schematic diagram is as follows figure 1 As shown, it consists of a substrate 1, a first oxide layer 2, a first suppression layer 3, a metal layer 4, a second suppression layer 5 and a second oxide layer 6 from bottom to top;

[0034] The material of the substrate 1 is glass with a thickness of 1mm;

[0035] The material of the first oxide layer 2 is AZO with a thickness of 14nm;

[0036] The material of the first suppression layer 3 is aluminum (Al) with a thickness of 0.2nm;

[0037] The material of the metal layer 4 is silver (Ag), and the thickness is 12nm;

[0038] The material of the second suppression layer 5 is aluminum (Al) with a thickness of 0.2nm;

[0039] The material of the second oxide layer 6 is AZO with a thickness of 50nm.

[0040] The preparation method of above-mentioned a kind of transparent conductive film, concrete steps are as follows:

[0041] Use cleaned transparent glass, place it i...

Embodiment 2

[0044] A kind of transparent conductive film, its cross-sectional schematic diagram is as follows figure 2 As shown, it consists of a substrate, a first oxide layer, a first suppression layer, a metal layer and a second oxide layer from bottom to top.

[0045] The material of the substrate 1 is glass with a thickness of 1mm;

[0046] The material of the first oxide layer 2 is ZnO, TiO 2 , NiO, Mo 2 o 3 or WO 3 , with a thickness of 12nm;

[0047] The material of the first suppression layer 3 is LiF with a thickness of 0.4nm;

[0048] The material of the metal layer 4 is Ag with a thickness of 12nm;

[0049] The material of the second oxide layer 6 is ZnO, TiO 2 , NiO, Mo 2 o 3 or WO 3 , thickness 30nm.

[0050] The preparation method of above-mentioned a kind of transparent conductive film, concrete steps are as follows:

[0051] Use cleaned transparent glass, place it in the cavity of the magnetron sputtering system, and evacuate it to a vacuum of 10 -5 Torr, fo...

Embodiment 3

[0054] A kind of transparent conductive film, its cross-sectional schematic diagram is as follows image 3 As shown, it consists of a substrate 1 , a first oxide layer 2 , a metal layer 4 , a second suppression layer 5 and a second oxide layer 6 from bottom to top.

[0055] The material of the substrate 1 is glass with a thickness of 1mm;

[0056] The material of the first oxide 2 is AZO with a thickness of 12nm;

[0057] The material of the metal layer 4 is Ag with a thickness of 12nm;

[0058] The material of the second suppression layer 5 is LiF with a thickness of 0.4nm;

[0059] The material of the second oxide layer 6 can be ITO or AZO, with a thickness of 50nm.

[0060] The preparation method of above-mentioned a kind of transparent conductive film, concrete steps are as follows:

[0061] Use clean and transparent glass, put it into the cavity of the magnetron sputtering system, and pump it to a vacuum of 10 -5 Torr, followed by Ar gas, sputtering the first oxide A...

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Abstract

The invention discloses a transparent conductive thin film and a preparation method thereof. The transparent conductive thin film is of a layer structure and comprises a substrate, a first oxide layer, a second oxide layer, a metal layer and inhibition layers, wherein the inhibition layers are directly inserted between the metal layer and the oxide layers. In the transparent conductive thin film disclosed by the invention, by inserting the inhibition layers, semiconductor thin layers for inhibiting the diffusion of atoms in the metal layer toward the oxide layers are formed at the interfaces of the oxide layers and the metal layer. Under the strong heated condition, the metal atoms in the metal thin film can still be well inhibited in the metal layers due to the existence of the inhibition thin layers, so that the thermal stability of the transparent conductive thin film is strengthened.

Description

technical field [0001] The invention belongs to the field of photoelectric devices, and relates to a transparent conductive film and a preparation method thereof. Background technique [0002] Transparent conductive oxides (TCOs) usually have the characteristics of wide band gap, high light transmittance and low resistivity, and have a wide range of applications in solar cells, flat panel displays, electromagnetic shielding, and special function window coatings. At present, transparent conductive films such as tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO) and aluminum-doped ZnO (AZO) have been widely used in the field of optoelectronics, but they have poor flexibility and cannot meet the application requirements of flexible devices. Oxide-metal-oxide (OMO) developed in recent years (such as ITO|Ag|ITO, WO 3 |Ag|WO 3 ,ZnO|Ag|ZnO, ITO|Au|ITO and AZO|Ag|AZO, etc.) transparent conductive film has the characteristics of high light transmittance and electrical co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/44H01L51/48
CPCY02E10/549
Inventor 周建萍
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER