Nitrogenous magnesium silicate film, and preparation method and application thereof

A magnesium silicate and thin film technology, applied in chemical instruments and methods, luminescent materials, etc., can solve the problems of expensive rare earth, high cost, scarcity of resources, etc.

Active Publication Date: 2012-11-28
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such materials currently reported are often in the form of pure powder, and rare earths are expensive and resources are scarce, which makes it difficult to apply in actual production and the cost is high

Method used

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  • Nitrogenous magnesium silicate film, and preparation method and application thereof
  • Nitrogenous magnesium silicate film, and preparation method and application thereof
  • Nitrogenous magnesium silicate film, and preparation method and application thereof

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preparation example Construction

[0019] Another purpose of the embodiment of the present invention is to provide the preparation method of the nitrogen-containing magnesium silicate film of the embodiment of the present invention, please refer to figure 1 , which includes the following steps:

[0020] S01: MgO powder, SiO 2 Powder, Si 3 N 4 Powder and TiO 2 The powder is mixed according to the molar ratio (1-X): 0.5:0.5:X, and sintered as the target material, wherein the value range of X is 0.01-0.15;

[0021] S02: Put the target material into the magnetron sputtering chamber, vacuumize, set the working pressure to 0.2Pa-4.5Pa, feed the mixed gas of inert gas and hydrogen, the flow rate of the mixed gas is 15sccm-30sccm, the substrate temperature The temperature is 350°C-750°C, the sputtering power is 30W-150W, and the nitrogen-containing magnesium silicate film is obtained by sputtering.

[0022] In step S01, MgO powder, SiO 2 Powder, Si 3 N 4 Powder and TiO 2 The powder is mixed evenly according to...

Embodiment 1

[0028] 7.36g MgO powder with a purity of 99.99%, 6g SiO 2 Powder, 14g Si 3 N 4 Powder and 1.28g TiO 2 After mixing the powder evenly, it is sintered at a high temperature of 1200°C to form a Φ50×2mm ceramic target, and the target is loaded into a vacuum chamber. Then, the glass substrate with ITO was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, and treated with oxygen plasma, and placed in a vacuum chamber. The distance between the target and the substrate was set to 70mm. Use a mechanical pump and a molecular pump to pump the vacuum of the cavity to 7.0×10 -4 Pa, the mixed gas of argon and hydrogen fed into the vacuum chamber, wherein the hydrogen content is 5% (volume ratio), the gas flow rate is 20 sccm, the pressure is adjusted to 1.0 Pa, the substrate temperature is set to 500 ° C, and the sputtering The radiation power was adjusted to 100W, and a nitrogen-containing magnesium silicate film was obtained by sputtering. The o...

Embodiment 2

[0030] 6.8g MgO powder with a purity of 99.99%, 6g SiO 2 Powder, 14g Si 3 N 4 Powder and 2.4g TiO 2 After mixing the powder evenly, it is sintered at a high temperature of 900°C to form a Φ50×2mm ceramic target, and the target is placed in a vacuum chamber. Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the target and the substrate was set to 50mm. Use a mechanical pump and a molecular pump to evacuate the vacuum of the chamber to 1.0×10 -3 Pa, the mixed gas of argon and hydrogen fed into the vacuum chamber, wherein the hydrogen content is 1% (volume ratio), the gas flow rate is 20 sccm, the pressure is adjusted to 0.2 Pa, the substrate temperature is set to 350 ° C, and the sputtering The radiation power was adjusted to 100W, and a nitrogen-containing magnesium silicate film was obtained by sputtering. The obtained nitrogen-con...

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Abstract

The invention relates to the field of preparation of semiconductor materials, and provides a nitrogenous magnesium silicate film which is a titanium-doped nitrogenous magnesium silicate film of which the general formula is Mg1-XSi2O2N2:XTi4+, wherein X-0.01-0.15. The invention also provides a preparation method of the nitrogenous magnesium silicate film, which comprises the following steps: mixing MgO powder, SiO2 powder, Si3N4 powder and TiO2 powder, and sintering to obtain a target; and filling the target into a magnetron sputtering chamber, vacuumizing, setting working parameters, and sputtering to obtain the nitrogenous magnesium silicate film. The invention also provides application of the nitrogenous magnesium silicate film in electroluminescent devices.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic materials, and in particular relates to a nitrogen-containing magnesium silicate film and its preparation method and application. Background technique [0002] Compared with the display screen made of traditional luminescent powder, the luminescent film shows strong advantages in terms of contrast, resolution, heat conduction, uniformity, adhesion to the substrate, and outgassing rate. Therefore, as functional materials, luminescent thin films have broad application prospects in flat panel displays such as cathode ray tubes (CRTs), electroluminescence displays (ELDs) and field emission displays (FEDs). [0003] Thin film electroluminescent display (TFELD) has attracted widespread attention and developed rapidly due to its advantages such as active light emission, full solid state, impact resistance, fast response, large viewing angle, wide application temperature, and simple process. T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/59
Inventor 周明杰王平陈吉星黄辉
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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