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Design process for chip-type power diode

A technology of power diode and design process, applied in the field of chip power diode design process, can solve the problems of product stability and safety hidden danger, low junction temperature of design work, etc.

Inactive Publication Date: 2015-07-15
SHAOXING UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the limitations of the silicone rubber passivation process, its designed working junction temperature is less than 125°C, and its chip is in a critical and over-limit working state in the high-temperature environment of the integrated electronic ballast, which brings stability and safety to the product. Hidden danger

Method used

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  • Design process for chip-type power diode
  • Design process for chip-type power diode

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Embodiment 1

[0017] A chip power diode design process includes rated current design, rated reverse repetitive voltage design, chip size design, layout design, diffusion condition design and product evaluation. The chip diode adopts a micro-mesa GPP glass passivation process.

[0018] The rated current of the chip power diode is 0.3A, and the chip size is 32mil.

[0019] The rated reverse repetition voltage of the chip power diode is 600V.

[0020] The size of the chip active area of ​​the above-mentioned chip power diode is 21mil. In order to form an effective protection ring, the size of the nickel-plated area on the secondary photolithography table is 18mil*18mil, and the width of the photolithography lines is selected to be 2, 3, 4, and 5mil respectively. .

[0021] Diffusion condition design: In order to ensure sufficient mesa size of the chip power diode, the etching depth should not be too deep to reduce lateral corrosion. The depth is composed of two parts: the PN junction depth a...

Embodiment 2

[0033] A chip power diode design process includes rated current design, rated reverse repetitive voltage design, chip size design, layout design, diffusion condition design and product evaluation. The chip diode adopts a micro-mesa GPP glass passivation process.

[0034] The rated current of the chip power diode is 0.5A, and the chip size is 42mil.

[0035] The rated reverse repetition voltage of the chip power diode is 800V.

[0036] Diffusion condition design: In order to ensure sufficient mesa size of the chip power diode, the etching depth should not be too deep to reduce lateral corrosion. The depth is composed of two parts: the PN junction depth and the space expansion area, where the width of the space expansion area is determined by the avalanche breakdown voltage and is a constant value. Therefore, in order to reduce the etching depth, the only way to reduce the depth of the PN junction is to reduce the boron diffusion time. Since the phosphorus junction depth is ma...

Embodiment 3

[0040] A chip power diode design process includes rated current design, rated reverse repetitive voltage design, chip size design, layout design, diffusion condition design and product evaluation. The chip diode adopts a micro-mesa GPP glass passivation process.

[0041] The rated current of the chip power diode is 0.7A, and the chip size is 45mil.

[0042] The rated reverse repetition voltage of the chip power diode is 1000V.

[0043] Diffusion condition design: In order to ensure sufficient mesa size of the chip power diode, the etching depth should not be too deep to reduce lateral corrosion. The depth is composed of two parts: the PN junction depth and the space expansion area, where the width of the space expansion area is determined by the avalanche breakdown voltage and is a constant value. Therefore, in order to reduce the etching depth, the only way to reduce the depth of the PN junction is to reduce the boron diffusion time. Since the phosphorus junction depth is m...

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Abstract

The invention discloses a design process for a chip-type power diode, belonging to a design process for a semiconductor. The design process for the chip-type power diode comprises the following steps of: design for a rated current, design for a rated reverse repetition voltage, design for a chip size, design for a layout, design for diffusion conditions, and product evaluation; and a micro-table GPP (glass passivation parts) glass passivation process is adopted for the chip-type diode. The micro-table GPP glass passivation process is adopted; the working junction temperature in the chip design is 150 DEG C, which can completely meet applications in the field of green illumination; and chip size can be reduced to 32 mil from 0.3 A specification, so that the application requirements of the present green illumination of lower than 20 W can be widely met.

Description

technical field [0001] The invention relates to a semiconductor design process, in particular to a chip power diode design process. Background technique [0002] Power diodes mainly include Schottky diodes, fast recovery diodes and power frequency diodes. As electronic products become thinner and smaller, power diodes, which are basic components, have also started a trend of miniaturization, integration, and high frequency. At present, most of the green lighting integrated electronic ballasts use plug-in power diodes with a specification of 1A. This is the smallest shape of plug-in power diodes that can achieve 1A specifications at this stage, and is widely used by green lighting manufacturers. With the in-depth development of the miniaturization of green lighting electronic products, the market's requirements for power diodes are constantly increasing, and products designed by traditional processes can no longer meet the needs of technology improvement and product upgradin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/329
Inventor 张新华张若煜
Owner SHAOXING UNIVERSITY
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