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High-purity low-density ITO target material and preparation method thereof

A low-density, target technology, used in the field of ITO targets, can solve the problems of lack of ITO targets, high production cost, expensive equipment, etc., to improve light transmittance and electrical conductivity, small grain size, phase structure. single effect

Inactive Publication Date: 2014-02-26
苏州晶纯新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its disadvantages are: due to the use of uniform gas pressure, there is no shear stress and mold friction, so the shape retention is very good, but the size of the target is limited by the pressure of the equipment and the pressure cylinder, and it is impossible to prepare a large-size target; the equipment is expensive and the investment High cost; low production efficiency, high production cost, and weak product competitiveness
The disadvantage is that this method is the most difficult sintering method compared with other methods. To obtain a dense sintered body, it is often necessary to increase the sintering activity of the raw material powder or add sintering aids
[0016] In summary, the production process of ITO targets in the prior art is mainly aimed at preparing high-density materials, and how to prepare low-density ITO targets There is no related report

Method used

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  • High-purity low-density ITO target material and preparation method thereof
  • High-purity low-density ITO target material and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0038] According to this embodiment, the ITO target is prepared by the following steps:

[0039] (1) Using spherical ITO powder with an average particle size of 50nm and a purity of 99.995% as the raw material, the agglomeration in the powder is removed by grinding and sieving; the ITO powder is hydraulically formed into a blank by a hydraulic press. The pressure used is 50MPa;

[0040] (2) In order to ensure that during the high temperature sintering process, the flow and bonding of the material are carried out in an orderly and staged manner, the sintering process adopts a multi-stage heating and pressure method to complete the sintering. The pressed blank is placed in a furnace for sintering. During sintering, the vacuum degree in the furnace is 6.0×10 -4 Pa, raise the temperature to 800°C at a rate of 100°C / h, fill with 1 atm of oxygen after holding for 8 hours, then heat up to 1500°C at a rate of 100°C / h, hold for 4 hours, and finally at a rate of 50°C / h The te...

Embodiment 2

[0042] According to this embodiment, the ITO evaporation target is prepared by the following steps:

[0043] (1) Using spherical ITO powder with an average particle size of 50nm and a purity of 99.995% as the raw material, the agglomeration in the powder is removed by grinding and sieving; the ITO powder is hydraulically formed into a blank by a hydraulic press. The pressure used is 50MPa;

[0044] (2) In order to ensure that during the high temperature sintering process, the flow and bonding of the material are carried out in an orderly and staged manner, the sintering process adopts a multi-stage heating and pressure method to complete the sintering. The pressed blank is placed in a furnace for sintering. During sintering, the vacuum degree in the furnace is 6.0×10 -4 Pa, the temperature was raised to 800°C at a rate of 150°C / h, filled with 1 atm of oxygen after holding for 8 hours, then heated to 1500°C at a rate of 150°C / h, held for 4 hours, and finally at a rat...

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Abstract

The invention relates to a high-purity low-density ITO target material and a preparation method thereof. The high-purity low-density ITO target material has purity greater than or equal to 99.99%, relative density of 55 to 65% and an average crystal size less than or equal to 50 micrometers. The preparation method comprises the following steps of 1, carrying out hydraulic molding of ITO powder to obtain a blank, and 2, putting the blank into a furnace having an internal vacuum degree of 10<-4> to 10<-3>Pa, and carrying out sintering by heating to a temperature of 800 to 900 DEG C at a heating rate of 50 to 300 DEG C / h, carrying out heat preservation for 4 to 24 hours, filling oxygen into the furnace, heating to a temperature of 900 to 1500 DEG C at a heating rate of 100 to 400 DEG C / h, carrying out heat preservation for 4 to 24 hours and cooling to a room temperature at a cooling rate of 20 to 100 DEG / h. The high-purity low-density ITO target material can be evaporated at a high temperature and then is deposited on a glass substrate so that a conductive film having low resistivity and high light transmittance is obtained and an ITO conductive film can be formed on an organic material.

Description

technical field [0001] The invention relates to an ITO target material, especially a high-purity low-density ITO target material and a preparation method thereof. Background technique [0002] The target material is a mixture of indium trioxide and tin dioxide, which is an important raw material for the preparation of ITO thin films. The ITO target is mainly used for the production of ITO film transparent conductive glass, which is the main material for the manufacture of flat liquid crystal displays, and has broad and important applications in the electronics industry and information industry. [0003] In the early 1990s, the Japan New Metal Society listed ITO targets as the first high-tech metal materials. During the "Ninth Five-Year Plan" period, my country also used it as a national "Ninth Five-Year Plan" key project for research, and tried several preparation methods such as hot pressing, sintering and hot isostatic pressing, but failed to form large-scale industrial p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C04B35/622C04B35/457C04B35/01
Inventor 钟小亮王广欣王树森
Owner 苏州晶纯新材料有限公司