Polycrystalline ingot furnace and its hot door device

Abstract

The invention discloses a hot door device which comprises: a first hot door apparatus which is provided with at least two oppositely-arranged first door bodies; a first drive unit which is used to drive each first door body to move towards each other or away from each other; a second hot door apparatus which is arranged on the downside of the first hot door apparatus and is provided with at least two oppositely-arranged second door bodies, wherein there is an included angle between the opening direction of the second hot door apparatus and the opening direction of the first hot door apparatus; and a second drive unit which is used to drive each second door body to move towards each other or away from each other. Through at least two split-level hot door apparatuses, when the two hot door apparatuses simultaneously open, an opening area gradually expands from the center to the periphery so as to form a temperature conducting area, opening degree of which can be controlled. Therefore, crystal growth more accords with technological requirements. By the adoption of the hot door device, temperature gradient of a crystal growth area is effectively controlled, temperature radiation quantity is controlled, consumption of heat energy is minimized, and the purpose of saving electric energy is achieved. The invention also discloses a polycrystalline ingot furnace with the above hot door device.

Description

technical field [0001] The invention relates to the technical field of silicon wafer processing, in particular to a polycrystalline ingot furnace and a hot device thereof. Background technique [0002] At present, global energy is becoming more and more tense, solar energy has been widely used as a new energy source, and the photovoltaic industry is developing rapidly. Among them, crystal growth technology has always been the main link in silicon wafer processing. [0003] Such as figure 1 As shown, there are two types of solar cell silicon wafers: polycrystalline and single crystal in structure, among which polycrystalline silicon wafers have gradually become the mainstream of industry development because their manufacturing costs are lower than single crystal silicon wafers. The thermal field control method of the polycrystalline ingot furnace commonly used at present is to place the primary silicon in a square heat preservation tank 1, and heat the polycrystalline silico...

AI Technical Summary

Problems solved by technology

At present, the opening is realized by the relative movement of two relatively arranged hot spots (the left hot spot 31 and the right hot spot 32, which are respectively driven and moved by the left driving device 61 and the right driving device 62), and the temperature of the bottom ingot is subjected to the heat conduction of the cooling device. Form a regional temperature gradient, however, the existing hot spots cannot be opened from the center to the surroundings, that is, the requirement of gradually cooling from the center to the surroundings cannot be realized, so the temperature gradient and temperature radiation in the crystal growth area cannot be effectively controlled, increasing Reduced heat consumption, waste of electricity

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