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Preparation method of laminated transparent conducting layer LED (light emitting diode) chip

A transparent conductive layer, LED chip technology, used in circuits, electrical components, semiconductor devices, etc.

Active Publication Date: 2012-12-19
广东昭信集团股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Therefore, in order to overcome the problem of high contact barrier between ITO film layer and P-GaN in the prior art, the present invention provides a kind of transparent conductive layer structure and its preparation method that are applied in light-emitting diode (LED) chip

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  • Preparation method of laminated transparent conducting layer LED (light emitting diode) chip
  • Preparation method of laminated transparent conducting layer LED (light emitting diode) chip

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Embodiment Construction

[0012] A structure of a transparent conductive layer applied to a light-emitting diode (LED) chip and a preparation method thereof according to the present invention will be described in detail below with reference to the accompanying drawings and embodiments.

[0013] Wherein, in the following description, various aspects of the present invention will be described. However, those skilled in the art can only use some or all structures or processes of the present invention to implement the present invention. For clarity of explanation, specific numbers, arrangements and sequences are set forth, but it will be apparent that the invention may be practiced without these specific details. In other instances, well-known features have not been described in detail in order not to obscure the invention.

[0014] In the first embodiment of the present invention, a method for preparing a layered transparent conductive layer LED chip structure is provided, comprising the following steps: ...

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Abstract

The invention provides a preparation method of a laminated transparent conducting layer LED (light emitting diode) chip structure and the laminated transparent conducting layer chip structure. The preparation method comprises the following steps of: 10), providing an LED epitaxial wafer; 20) carrying out Mesa treatment on the LED epitaxial wafer, so that a N-GaN layer of the epitaxial wafer can be exposed; 30) depositing a first transparent electric layer with high work function on the unexposed surface of the epitaxial wafer; 40) depositing a second transparent electric layer on the first transparent electric layer; and 50) plating a P electrode and an N electrode in an evaporation way, so as to an LED COW structure. According to the preparation method, a layer of new film layer with high work function is inserted between a transparent electric film layer film and a P-GaN, so that the contact-potential barrier between the transparent electric film layer film and the P-GaN can be reduced, the driving voltage of the chip can be reduced, and the LED external quantum efficiency can be guaranteed since the refractive index of the inserting layer is between refractive indexes of an ITO (indium tin oxide) film layer and the P-GaN or is equal to the refractive index of the transparent electric film layer arranged above the inserting layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more specifically, the invention relates to a method for preparing a transparent conductive layer applied to a light emitting diode (LED) chip. Background technique [0002] Compared with other light sources, light-emitting diodes (LEDs) have the advantages of long life, high reliability, small size, fast response and easy integration, making them widely used in various display light sources such as information display, image processing, and consumer electronics. . [0003] At present, the transparent electrodes of high-power LEDs mainly use indium tin oxide (ITO). ITO has the advantages of conductivity and transparency, and ITO thin films are widely used in the LED field due to their high transmittance and low surface resistivity. The transparent conductive layer in the process, in the manufacture of isotropic LED chips, almost 100% use ITO film layer as the transparent ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/42
Inventor 刘英策吴大可火东明
Owner 广东昭信集团股份有限公司
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