Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Nanowire-based transparent conductors and methods of patterning same

A technology of transparent conductors and nanostructures, applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for information processing, can solve the problem of low conductivity value, high optical absorption, lack of chemical stability and long-term stability of conductive polymers And other issues

Active Publication Date: 2015-05-20
CAMBRIOS FILM SOLUTIONS CORP
View PDF43 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conducting polymers generally have lower conductivity values ​​and higher optical absorption (especially at visible wavelengths) than metal oxide films, and lack chemical and long-term stability.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nanowire-based transparent conductors and methods of patterning same
  • Nanowire-based transparent conductors and methods of patterning same
  • Nanowire-based transparent conductors and methods of patterning same

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0163] Deposition of nanowires and preparation of transparent conductors

[0164] Accordingly, in certain embodiments, described herein are methods of making a transparent conductor comprising: depositing a plurality of metal nanowires distributed in a fluid on a substrate; and forming metal nanowires on the substrate by drying the fluid. line network layer.

[0165] Metal nanowires can be prepared as described above. Metal nanowires are typically dispersed in a liquid to facilitate deposition. It should be understood that, as used herein, "deposition" and "coating" are used interchangeably. Any non-corrosive liquid in which the metal nanowires can form a stable dispersion (also referred to as a "metal nanowire dispersion") can be used. Preferably, the metal nanowires are dispersed in water, alcohols, ketones, ethers, hydrocarbons or aromatic solvents (benzene, toluene, xylene, etc.). More preferably, the liquid is volatile and has a boiling point of no more than 200°C, ...

Embodiment 1

[0397] Synthesis of silver nanowires

[0398] Silver nanowires were synthesized by reduction of silver nitrate dissolved in ethylene glycol in the presence of poly(vinylpyrrole tetrachloride) (PVP), as described e.g. in Y. Sun, B. Gates, B. Mayers , and Y. Xia's "Crystalline silver nanowires by soft solution processing" ("Crystalline silver nanowires by soft solution processing") Nanoletters, (2002), 2 (2) 165-168 described in the "polyol" method. In an improved process described in US application Ser. No. 11 / 766,552 to Cambrios Technologies Corporation, more uniform silver nanowires are produced at higher yields than the traditional "polyol" process. This application is hereby incorporated by reference in its entirety.

Embodiment 2

[0400] Preparation of transparent conductors

[0401] Autoflex EBG5 polyethylene terephthalate (PET) with a thickness of 5 μm was used as the substrate. PET substrates are optically transparent insulators. The light transmittance and haze of the PET substrates are shown in Table 2. Light transmittance was measured using the method in ASTM D 1003 unless otherwise stated.

[0402] First, an aqueous dispersion of silver nanowires is prepared. The silver nanowires have a width of about 70 nm to 80 nm and a length of about 8 μm. The concentration of silver nanowires (AgNW) was about 0.5% w / v of this dispersion, resulting in an optical density of about 0.5 (measured on a Molecular Devices Spectra Ma×M2 plate reader). The dispersion was then coated on a PET substrate by precipitating the nanowires onto the substrate. Other coating techniques may be used, such as flow metered by a narrow channel, die flow, flow over an inclined plane, etc., as will be appreciated by those skilled...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Boiling pointaaaaaaaaaa
Viscosityaaaaaaaaaa
Surface resistivityaaaaaaaaaa
Login to View More

Abstract

Method of patterning nanowire-based transparent conductors are described. In particular, the methods are directed to partial etching that generates low-visibility or invisible patterns.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Patent Application No. 12 / 712,096, filed February 24, 2010, and US Provisional Patent Application No. 61 / 442,693, filed February 14, 2011. All of these applications are hereby incorporated by reference in their entirety. technical field [0003] The present invention relates to transparent conductors, methods of making and patterning them, and applications of transparent conductors. Background technique [0004] Transparent conductors refer to conductive films coated on high transmittance surfaces or substrates. Transparent conductors can be fabricated with surface conductivity while maintaining good optical clarity. Such surface-conducting transparent conductors are widely used as transparent electrodes in flat liquid crystal displays, touch panels, electroluminescent devices, and thin-film photovoltaic cells, and as antistatic layers and electromagnetic wave shielding layer...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18B82Y40/00H01L31/0224H01L51/10H01L51/44H01L51/00B82Y10/00
CPCB82Y10/00B82Y40/00G06F3/045G06F2203/04102H01L31/022466H05K1/09H05K1/092H05K1/095H05K3/06H05K2201/026Y02E10/549Y02P70/50H10K71/621H10K30/82H10K50/828H01B5/14H01B13/00H01L31/0224H01L31/18
Inventor 代海霞那朔迈克尔·A·斯贝德杰弗瑞·沃克
Owner CAMBRIOS FILM SOLUTIONS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products