Insulated-gate bipolar transistor with embedded island structure

Abstract

An insulated-gate bipolar transistor with an embedded island structure belongs to the technical field of power semiconductor devices, and adopts a structure that a P-type embedded island and an N-type carrier storage layer structure are respectively introduced below the surface of an MOS (Metal Oxide Semiconductor) structure of a device. During forward blocking, the charge and the auxiliary electric field which are introduced by the P-type embedded island can weaken the peak electric field below the MOS structure so as to improve the voltage resistance of the device. During backward blocking, owing to high doping concentration or large thickness of the N-type carrier storage layer, the potential barrier of a cavity is lifted, the concentration of carriers near the emitting electrode is enhanced, accordingly, better carrier distribution is acquired, the forward saturation voltage drop of the device is reduced, better forward conduction voltage drop and turn-off loss compromise are obtained. The introduced P-type embedded island and N-type carrier storage layer are formed through ion implantation, epitaxy and other processes before the formation of a P-type base region. The insulated-gate bipolar transistor is suitable for the field of semiconductor power devices and power integrated circuits from low power to high power.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to an insulated gate bipolar transistor (IGBT). Background technique [0002] Power semiconductor technology is the core of power electronics technology. With the development of microelectronics technology, modern power semiconductor technology represented by gate-controlled power devices has developed rapidly since the 1980s, which has greatly promoted the progress of power electronics technology. . [0003] The power MOS tube is a voltage-controlled device, which can control the switching of the device by controlling the gate voltage. The structure of the driving circuit is simple, and the single-carrier conductivity makes it excellent in switching characteristics. However, multi-carrier conduction cannot produce conductance modulation effect in the drift region, so it is not suitable for medium and high voltage applications. At present, medium-high-voltage and...

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Problems solved by technology

However, the N-type carrier storage layer introduced by the above structure will increase the concentration of the N-type drift region under the P-type base region. If the concentration of the N-type carrier storage layer introduced is low, the hole barrier is small, The accumulation of holes is not obvious, and the improvement of forward saturation pressure drop is small

If the concentration of the N-type carrier storage layer introduced is too high, although it will significantly improve the carrier distribution during forward conduction, it will cause a sharp drop in the forward withstand voltage of the device, which will seriously affect the working performance of the device.

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