IGBT (Insulated Gate Bipolar Translator) component and manufacturing method thereof

Abstract

The embodiment of the invention discloses an IGBT (Insulated Gate Bipolar Translator) component and a manufacturing method thereof. The method comprises the following steps of: providing a substrate which comprises a body layer, a well region and a source region which are located on the surface of the body layer, and a first grid medium layer and a grid region which are located on the surface of the body layer; and removing part of well region and source region materials and reserving the source region material below the grid region and the source region material beyond part of the grid region, thus forming a shallow ditch groove in the surface of the body layer, and further, forming a doping region in the surface of the well region below the shallow ditch groove, wherein the transverse width of the doping region does not extend into the part, below the grid region, of the shallow ditch groove, and the doping concentration of the doping region is larger than that of the well region. According to the embodiment of the invention, a shallow junction with high doping concentration is formed in the well region of the component, and the contact area of the doping region and the source region is reduced, thereby reducing the contact resistance of the contact surface of the source region and the well region, and avoiding a latch-up effect; and the shallow junction is not dispersed to the ditch groove, thereby guaranteeing the IGBT component to have a low threshold voltage and improving the performance of the component.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more specifically, to an IGBT device and a manufacturing method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET), and has a MOSFET The advantages of the high input impedance of the device and the low conduction voltage drop of the power transistor (that is, the giant transistor, GTR for short), because the IGBT has the advantages of small driving power and low saturation voltage, the IGBT is currently used as a new type of power electronic device It is widely used in various fields. [0003] For IGBT devices with planar gate structure, such as figure 1 As shown, taking the N-type channel as an example, it mainly includes: [0004] N-type lightly doped (N-) substrat...

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Problems solved by technology

[0010] However, it has been found in actual production that although the latch-up effect of the IGBT devices produced by the two methods of the prior art is reduced, the threshold voltage of the device is increased to a certain extent, making it difficult to turn on the device.

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