Laser thermal lithography organic photoresist and preparation method of photoresist

A technology of laser thermal etching and photoresist, which is applied in the field of photoresist, can solve the problems of developer environmental pollution, etc., and achieve the effect of high film production efficiency and cost saving

Active Publication Date: 2013-12-25
HANGZHOU INSTITUTE OF OPTICS AND FINE MECHANICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The developer is generally an acidic or alkaline solution, which not only requires anti-corrosion equipment, but also easily causes environmental pollution after use.

Method used

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  • Laser thermal lithography organic photoresist and preparation method of photoresist
  • Laser thermal lithography organic photoresist and preparation method of photoresist
  • Laser thermal lithography organic photoresist and preparation method of photoresist

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preparation example Construction

[0029] The preparation method of the described laser thermal etching organic photoresist, the specific preparation steps of the method are as follows:

[0030] ① The range of synthetic raw materials and their weight percentages are: phloroglucinol 3.1wt%~6.3wt%; concentrated hydrochloric acid 15wt%~20wt%; aldehyde compounds 1.5wt%~6.6wt%; ethanol 33.55wt%~52.8 wt%; deionized water 24wt% ~ 39.5wt%; select the weight percentage of synthetic raw materials and weigh the raw materials;

[0031] ②Dissolve the phloroglucinol in the mixed solution of ethanol and deionized water, pass it under the protection of nitrogen, stir and slowly add the concentrated hydrochloric acid dropwise, and then slowly add the Aldehyde compounds are added dropwise, stirred and reacted at a temperature of 25°C to 78°C for 12 to 48 hours, the reaction formula is as follows:

[0032]

[0033] ③ After the reaction, stand and cool for 1 to 2 hours, filter and dry under reduced pressure to obtain the targe...

Embodiment 1

[0036] The preparation method of this embodiment:

[0037] Weigh the synthetic raw materials in the following percentages by weight:

[0038] Phloroglucinol: 6.3wt%; concentrated hydrochloric acid: 20wt%; n-heptanal: 5.7wt%; ethanol: 34wt%; deionized water: 34wt%.

[0039] Stir and react at 25°C for 12 hours, the reaction formula is as above;

[0040] After the reaction is over, let it stand for cooling for 1 hour, the product precipitates out from the reaction solution, and the obtained product is filtered off, and vacuum-dried at 50°C to obtain 2, 8, 14, 20-tetra-n-hexyl-4, 6, 10, 12, 16, 18, 22, 24, 25, 26, 27, 28-Dodecahydroxycalix[4]arene.

[0041] The characteristic absorption peak of the infrared spectrum is: 3312cm -1 ,2955cm -1 ,2926cm -1 ,2856cm -1 ,1612cm -1 ,1456cm -1 ,1130cm -1 .

Embodiment 2

[0043] As above-mentioned specific synthetic steps:

[0044] Weigh the synthetic raw materials in the following percentages by weight:

[0045] Phloroglucinol: 3.1wt%; concentrated hydrochloric acid: 15wt%; n-heptanal: 2.7wt%; ethanol: 52.8wt%; deionized water: 26.4wt%.

[0046] Stir and react at 25°C for 18 hours, the reaction formula is as above;

[0047] After the reaction, let stand and cool for 2 hours, the product precipitated from the reaction solution, filtered out the obtained product, and dried in vacuum at 50°C to obtain 2, 8, 14, 20-tetra-n-hexyl-4, 6, 10, 12, 16, 18, 22, 24, 25, 26, 27, 28-Dodecahydroxycalix[4]arene.

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Abstract

The invention discloses a laser thermal lithography organic photoresist, as well as a preparation method of the laser thermal lithography organic photoresist, wherein the photoresist is composed of 4, 6, 10, 12, 16, 18, 22, 24, 25, 26, 27 and 28-dodecanohydroxycalix [4]arene derivatives. The laser thermal lithography organic photoresist is prepared by phloroglucinol and aldehydes subjected to condensation reaction under the catalytic function of an acid. The photoresist can be dissolved in an organic solvent and can prepare a film in a simple spinning way. The photoresist is directly heated and gasified by laser to directly produce smooth pit-shaped micron and nano-pattern structures, and a following developing process is avoided, which further reduces the film making cost and improves the film making efficiency.

Description

technical field [0001] The invention relates to a photoresist, in particular to a laser thermally etched organic photoresist and a preparation method thereof. The laser thermally etched photoresist uses a focused laser to directly thermally vaporize and etch to prepare micron and nanoscale pattern structures. Background technique [0002] Micro- and nano-scale pattern structures are used in optical devices to reduce reflection (reference: Y.H.Kang, et al, Microelectronic Engineering 87(2010), 125–128), solar devices to increase photoelectric conversion efficiency (reference: M.A.Tsai, et al, OPTICS EXPRESS, 19(2011), A28-A34) and preparation of optical storage master discs (references: M.L.Lee, G.Q.Yuan, et al, Intermetallics, 18(2010), 2308-2311) have extensive and important applications. [0003] Laser thermal etching lithography technology is a new technology developed in recent years. It has attracted much attention due to its use of laser direct writing exposure, no nee...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004C07C37/20C07C39/17C07C39/23
Inventor 邓常猛耿永友吴谊群
Owner HANGZHOU INSTITUTE OF OPTICS AND FINE MECHANICS
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