Manufacturing method of semiconductor device
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as affecting adhesion, poor interface characteristics, and device electromigration failure, and achieve the effect of preventing diffusion and improving adhesion.
Active Publication Date: 2013-01-16
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
However, the interface characteristics between copper metal and the above-mentioned silicon carbide barrier layer are poor, which affects the adhesion between the two, and finally affects the breakdown voltage (VBD), time-dependent dielectric breakdown (TDDB), electrical Migration (EM), stress migration (SM) and other related electrical parameters lead to problems such as electromigration failure of the device
At the same time, the requirement for the time interval between the completion of chemical mechanical polishing to remove excess copper metal and the start of deposition of silicon carbide barrier layer will be correspondingly shortened, which is not conducive to the conversion between front and back manufacturing processes
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[0023] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.
[0024] For a thorough understanding of the present invention, detailed steps will be presented in the following description to illustrate how the present invention improves the adhesion between the Cu metal interconnection and the SiC barrier layer. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.
[0025] It sh...
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Abstract
The invention provides a manufacturing method of a semiconductor device, which comprises the following steps: providing a semiconductor substrate, forming insulating layers on the semiconductor substrate and forming copper interconnecting lines in the insulating layers; forming an adhering layer on the insulating layers and the copper interconnecting lines, wherein the adhering layer is a Si-rich silicon nitride layer mixed with carbon; and forming a blocking layer on the adhering layer. According to the manufacturing method of the semiconductor device, adhesiveness between the copper interconnecting lines and the silicon nitride blocking layer can be improved so as to effectively stop the diffusion of copper metal.
Description
technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for improving the adhesion between a copper metal interconnection line and a silicon carbide barrier layer. Background technique [0002] Copper metal has a low resistivity constant and high electromigration resistance. Therefore, using copper metal as a metal interconnection line can reduce the thickness of the interconnection layer, reduce the distributed capacitance between the interconnection layers, and increase the signal transmission speed. Since copper metal is easily oxidized and easily diffused into adjacent materials, it is necessary to cover the copper interconnection with a barrier layer to seal it when using copper metal as the metal interconnection. [0003] Silicon nitride is usually used as the barrier layer material, traditionally using silane (SiH 4 ) and ammonia (NH 3 ) The barrier layer material formed by the method of generating silicon nit...
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IPC IPC(8): H01L21/768
Inventor 周鸣洪中山
Owner SEMICON MFG INT (SHANGHAI) CORP