Semiconductor laser chip structure suitable for being welded reversely

Abstract

The invention relates to the technical field of semiconductor lasers and provides a semiconductor laser chip structure suitable for being welded reversely. The semiconductor laser chip structure mainly comprises a substrate layer 1, a buffer layer 2, an N-type wrapping layer 3, a lower waveguide layer 4, an active area 5, an upper waveguide layer 6, a P-type wrapping layer 7, a transition layer 8, a P-type contact layer 9, a ridge-shaped table surface 10, a current limiting channel 11 and a separation channel 12. The semiconductor laser chip structure can improve the contact area between a tube core of a semiconductor laser and welding flux and between the tube core of the semiconductor laser and heat sink, so that the compression resisting capability and the radiating performance of the tube core are improved, and the phenomenon of short circuit caused by climbing of the welding flux is avoided.

Description

technical field [0001] The invention relates to the technical field of designing semiconductor lasers, in particular to a semiconductor laser suitable for flip-welding. Background technique [0002] A semiconductor laser is a device that produces stimulated emission by using a certain semiconductor material as a working substance. Current semiconductor lasers can cover almost the wavelength range from ultraviolet to long-wave infrared. Semiconductor lasers are the most important class of lasers in practice. It is small in size, long in life, and can be pumped by simply injecting current. Its operating voltage and current are compatible with integrated circuits, so it can be monolithically integrated with it. Due to these advantages, semiconductor diode lasers have been widely used in laser communication, optical storage, optical gyro, laser printing, ranging and radar. High-power semiconductor lasers generally refer to single-tube lasers (>1W), laser line arrays (>1...

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Problems solved by technology

However, the inverted soldering method also has obvious disadvantages, that is, since the thickness of the epitaxial structure is only a few microns and it is in close proximity to the solder used for welding, during the process of soldering the device and when the device is working under a large current, due to The melting of the solder and its fluidity after melting cause the solder to climb laterally from the semiconductor die into the epitaxial structure, thereby causing a short circuit and causing the device to fail

When using soft solder such as indium, the above phenomenon is more likely to occur

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