ITO Sputtering Target

A technology of sputtering target and backing plate, applied in the field of ITO sputtering target, which can solve the problems of inability to melt and inject gaps, different electrical characteristics, etc.

Active Publication Date: 2013-01-30
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the amount of oxygen is small, since it has substantially the same characteristics as a general alloy, there is a problem that the electrical characteristics of the film formed on its upper part are different from those of the film formed by other parts. In addition, conversely, In the case of a large amount of oxygen, since the characteristics are basically the same as ITO, there is a problem that it cannot be melted and injected into the void at low temperature

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1）

[0053] As a raw material, the specific surface area is 5m 2 The mixed powder obtained by mixing the indium oxide powder and tin oxide powder in a weight ratio of 9:1 per gram is mixed and pulverized by a wet medium agitation mill based on a ball mill, and then injected into a die, at a rate of 700kg / cm 2 pressure forming to produce ITO molded body.

[0054] Then, the ITO molded body was heated from room temperature to 1500° C. at a rate of 5° C. / min in an oxygen atmosphere, then kept at 1500° C. for 20 hours, and then furnace-cooled and sintered.

[0055] The surface of the sintered body thus obtained was ground to a thickness of 6.5 mm using No. 400 diamond abrasive grains on a surface grinder, and the side was cut into a size of 127 mm×508 mm with a diamond cutter to obtain an ITO target member. Make two such processed bodies.

[0056] These sintered bodies were placed on a hot plate set at 200° C., and after the temperature was raised, indium was attached to only the side...

Embodiment 2）

[0068] It carried out under the same conditions as Example 1 except having changed the thickness of a cover layer into 0.1 mm. The result is similarly shown in Table 1, figure 1 shown. The distance (interval) between the covering layers of adjacent divided targets was 0.2 mm.

[0069] The number of occurrences of micro-arcs was 232 times, the average value of the square resistance was 10.2Ω / □, and the deviation of the square resistance was 7.0%. The result was that the square resistance was a moderate value, the deviation of the square resistance was small, and the number of occurrences of micro-arcs was small. .

[0070] In the case of ITO, the properties of the film on the substrate can be evaluated by the sheet resistance, and the small variation in the sheet resistance means that the film is formed uniformly on the substrate.

Embodiment 3）

[0072] It carried out under the same conditions as Example 1 except having changed the gap into 0.2 mm. The distance (interval) between the covering layers of adjacent divided targets was 0.1 mm. The result is also shown in Table 1, figure 1 shown.

[0073] The number of occurrences of micro-arcs was 210 times, the average value of sheet resistance was 10.3Ω / □, and the variation of sheet resistance was 4.9%. The result was that the sheet resistance was moderate, the variation of sheet resistance was small, and the number of occurrences of micro-arcs was small. .

[0074] In the case of ITO, the properties of the film on the substrate can be evaluated by the sheet resistance, and the small variation in the sheet resistance means that the film is formed uniformly on the substrate.

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Abstract

Disclosed is an ITO sputtering target which is configured by arranging a plurality of ITO divided targets on a backing plate and bonding the ITO divided targets to the backing plate. The ITO divided targets are provided with a coating layer of one substance, which is selected from among indium, indium alloys and tin alloys, only on clearance-side lateral surfaces between the arranged ITO divided targets. The purpose of the present invention is to provide an ITO sputtering target, especially a sputtering target for a FPD, which is capable of suppressing the generation of nodule or abnormal electrical discharge even during continuous sputtering of divided ITO targets and is also capable of providing a film that is highly uniform in the film characteristics, namely a film wherein the film characteristics of parts of the film formed on the substrate at positions corresponding to the clearance portions are not different from the film characteristics of the other parts of the film.

Description

technical field [0001] The present invention relates to a sputtering target used when producing a transparent conductive film by a sputtering method, and particularly relates to an ITO sputtering target including a plurality of target materials and having a divided part. Background technique [0002] ITO thin films for forming transparent conductive films are widely used as transparent electrodes of display devices such as liquid crystal displays, touch panels, and EL displays. Oxide thin films for forming transparent conductive films such as ITO are often formed by sputtering. [0003] ITO (Indium Tin Oxide) thin film has high conductivity and high transmittance, so it is used in display electrodes for flat panels, etc. In recent years, along with the increase in the size of the flat panel display (FPD), the demand for the increase in the size of the ITO target is also increasing. [0004] However, it is very difficult to increase the size of ITO due to investment in new ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
CPCC23C14/086C23C14/3407C23C14/3464C23C14/34
Inventor 挂野崇铃木了栗原敏也中村祐一郎关和广牧野修仁熊原吉一
Owner JX NIPPON MINING & METALS CO LTD
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