Thin-film transistor, manufacturing method of thin-film transistor, array substrate and display device

A technology of thin film transistors and array substrates, applied in the display field, can solve the problems of low TFT performance, small conductive channel, and small TFT conduction current, and achieve the effects of increasing effective width, increasing conduction current, and improving performance

Active Publication Date: 2013-02-06
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The existing thin-film transistor TFT has a small conduction channel while ensuring a small source electrode capacitance, the TFT conduction current is small, and the TFT performance is low

Method used

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  • Thin-film transistor, manufacturing method of thin-film transistor, array substrate and display device
  • Thin-film transistor, manufacturing method of thin-film transistor, array substrate and display device
  • Thin-film transistor, manufacturing method of thin-film transistor, array substrate and display device

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Embodiment Construction

[0034] Embodiments of the present invention provide a thin film transistor and a manufacturing method thereof, an array substrate and a display device, which are used to improve the performance of the TFT, thereby improving the image quality.

[0035] At present, using metal oxide as the TFT semiconductor layer can obviously improve the conduction current of the TFT, because the electron mobility of the metal oxide semiconductor layer is 5 to 10 times that of the amorphous silicon semiconductor layer. When the material of the semiconductor layer is determined, the conductivity of the TFT (here mainly guides the conduction current) depends on the structure of the TFT.

[0036] Embodiments of the present invention are mainly described for metal oxide TFTs, but the gist of the invention can also be applied to amorphous silicon TFTs and the like.

[0037] In the TFT provided by the embodiment of the present invention, each TFT is formed with a source electrode and at least two dra...

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PUM

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Abstract

The invention discloses a thin film transistor (TFT), a manufacturing method of the TFT, an array substrate and a display device, and ensures that the width of a conducting channel of the TFT is increased under the premise of not changing the capacitance of a source electrode, the performance of the TFT is improved and the image quality is improved accordingly. The TFT comprises a substrate, as well as a grid electrode, a source electrode, at least two drain electrodes and a semiconductor layer which are formed on the substrate, a grid electrode protective layer formed on the substrate and positioned between the grid electrode and the semiconductor layer, and an etching blocking layer formed on the substrate and positioned between the semiconductor layer and the source electrode, and between the semiconductor layer and the drain electrodes, wherein the source electrode and the drain electrodes are respectively connected with the semiconductor layer through via holes.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method thereof, an array substrate and a display device. Background technique [0002] In the field of display technology, flat panel display devices, such as Liquid Crystal Display (LCD) and Organic Light Emitting Display (OLED), are Quality and other advantages, occupy an important position in the field of flat panel display. [0003] Among them, the characteristics of a thin film transistor (Thin Film Transistor, TFT) as a pixel switching device play an important role in a high-quality display device. [0004] The working principle of TFT as a switching device is briefly described as follows: When the gate electrode of the TFT is applied with a voltage V relative to the ground GND g (referred to as the gate electrode voltage), an electric field will be generated between the gate electrode of the TFT and the drain electrode connected t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/06H01L21/336H01L27/12H01L21/28G09F9/33G09F9/35
CPCH01L29/7869H01L27/124H01L29/41733H01L29/66765H01L29/7866H01L27/1225H01L29/78606
Inventor 杨海鹏尹傛俊涂志中金在光
Owner BOE TECH GRP CO LTD
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