Novel CMOS-MEMS compatible uncooled infrared sensor pixel level packaging method

An uncooled infrared and sensor pixel technology, which is applied in the field of new CMOS-MEMS compatible uncooled infrared sensor pixel level packaging, can solve the problems of poor reliability and abnormal operation of the detector, achieve high reliability and realize mass application , The effect of reducing packaging cost

Inactive Publication Date: 2013-02-20
WUHAN GUIDE INFRARED CO LTD
View PDF6 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Wafer-level packaging uses semiconductor manufacturing technology to package the entire detector array in a vacuum chamber. The process is relat

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel CMOS-MEMS compatible uncooled infrared sensor pixel level packaging method
  • Novel CMOS-MEMS compatible uncooled infrared sensor pixel level packaging method
  • Novel CMOS-MEMS compatible uncooled infrared sensor pixel level packaging method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The present invention will be further described in conjunction with the accompanying drawings.

[0017] The purpose and technical solutions of the present invention will be described in detail below in conjunction with specific examples.

[0018] Such as figure 1 As shown, the device wafer has a readout circuit, a detector sensitive element 2 , a first sacrificial layer and a degasser 8 .

[0019] The first sacrificial layer 3 of the device wafer 1 after the processing of the sensitive element 2 is not released, and it is different from the usual processing process in that the degassing agent 8 must be prepared in advance in the process of making the detector sensitive element 2, so The material of the degassing agent is titanium; the second sacrificial layer 3' is prepared on the first sacrificial layer 3, such as figure 2 As shown, the height of the first sacrificial layer 3 and the second sacrificial layer 3' is 2.5um, and the material of the first sacrificial lay...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention relates to a novel CMOS-MEMS compatible uncooled infrared sensor pixel level packaging method, which can be performed according to the following steps: preparing a second sacrificial layer on a first sacrificial layer of a device wafer, and carrying out a graphical treatment; respectively preparing an infrared antireflection film and an infrared permeation layer on the second sacrificial layer by using a film preparation technology, and respectively etching a small hole on the infrared antireflection film and the infrared permeation layer; preparing a third sacrificial layer on the infrared permeation layer, and carrying out a graphical treatment; preparing an infrared antireflection film on the third sacrificial layer, and etching a small hole on the infrared antireflection film to be adopted as a release hole; and removing all the sacrificial layers through the release hole, sealing the release hole by using a hole filling material, and carrying out scribing to prepare the finished product. With the process, packaging cost of the uncooled infrared detector can be further reduced, and mass applications of the uncooled infrared detector can be easily achieved.

Description

technical field [0001] The invention relates to a pixel-level packaging method for an uncooled infrared focal plane array detector used in the technical field of infrared imaging systems. Background technique [0002] For uncooled infrared detectors, the traditional packaging type is mainly chip-scale packaging, usually using metal or ceramic shells. The main process includes the following steps: (1) Prepare the readout circuit and sensitive structure of the uncooled infrared detector on the silicon wafer; (2) Cut the prepared wafer into individual detector chips; (3) SMT , Wire punching; (4) Vacuum sealing. The above steps (3) and (4) are for a single chip. Since hundreds of detector chips can be cut out on one wafer, this packaging form is not only inefficient but also expensive. Currently, packaging costs for uncooled infrared detectors using traditional packaging types account for 90% of the total detector cost. The cost of uncooled infrared detectors remains high, an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B81C1/00
Inventor 黄立高健飞
Owner WUHAN GUIDE INFRARED CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap