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A kind of solar cell and its manufacturing method

A technology for solar cells and manufacturing methods, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of complex preparation process of porous silicon, poor shape stability of porous silicon, easy reduction of back reflection effect, etc., and achieve good back field bluntness Improved performance, improved photogenerated current, and suitable for mass production

Active Publication Date: 2015-12-02
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Claims
  • Application Information

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Problems solved by technology

[0007] However, this type of solar cell has the following disadvantages: first, there are a large number of dangling bonds and interface states in porous silicon, and the carriers are easy to recombine during the collection process, resulting in a decrease in the photogenerated current; second, the stable morphology of porous silicon poor performance, the back reflection effect is easy to reduce; third, the preparation process of porous silicon is complex and difficult to control, and it is difficult to realize industrialization

Method used

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  • A kind of solar cell and its manufacturing method
  • A kind of solar cell and its manufacturing method
  • A kind of solar cell and its manufacturing method

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Embodiment Construction

[0037] In order to enable those skilled in the art to better understand the technical solution of the present invention, the solar cell provided by the present invention and its manufacturing method will be described in detail below with reference to the accompanying drawings.

[0038] figure 1 A schematic diagram of the structure of the solar cell provided by the present invention. see figure 1 The solar cell provided in this embodiment includes a silicon substrate 1 , an N-type silicon 2 , an antireflection layer 3 , a front electrode 4 , a back reflection layer 5 and a back electrode 6 . Wherein, the N-type silicon 2 , the anti-reflection layer 3 and the front electrode 4 are sequentially stacked on the light-receiving surface side of the silicon substrate 1 from the silicon substrate 1 . The back reflection layer 5 and the back electrode 6 are sequentially stacked on the backlight side of the silicon substrate 1 from the silicon substrate 1 . Moreover, the silicon subst...

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Abstract

The invention provides a solar cell and a method for manufacturing the same. The solar cell comprises a silicon substrate and a back reflecting layer on one side of a backlight surface of the silicon substrate, wherein the back reflecting layer comprises at least two SiX layers which are overlaid, silicon contents of the SiX layers are different, and the X represents carbon, oxygen or nitrogen. The solar cell is high in photo-generated current and stable in structure, and the stable photo-generated current can be kept for a long time. In addition, the process for manufacturing the solar cell is simple, operation is easy, and the solar cell is suitable for large-scale production.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a solar cell and a manufacturing method thereof. Background technique [0002] A solar cell is a semiconductor device that converts sunlight into electrical energy through the photovoltaic effect, and its main raw material is silicon wafers (polysilicon). In recent years, due to the rapid rise in the price of silicon raw materials, it has become a bottleneck restricting the development of the photovoltaic industry. [0003] In order to reduce production costs, solar cells are gradually developing towards thinning, such as the thickness of silicon wafers is reduced from 300 μm (micrometer) to 200 μm, and gradually develops to below 100 μm. However, silicon is an indirect transition material. The thinner the silicon wafer, the more incident photons will be transmitted from the back of the silicon wafer, which will lead to a low utilization rate of the incident light, thereby reducing...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0232H01L31/04H01L31/18H01L31/054H01L31/068
CPCY02E10/50Y02P70/521Y02E10/52Y02E10/547Y02P70/50
Inventor 肖青平
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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