Thin-film solar cell
A technology of solar cells and thin films, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of the photoelectric conversion efficiency of base thin-film solar cells not being achieved.
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Embodiment 1
[0028] (1) Put the cleaned soda-lime glass 1 into a vacuum sputtering device, and sputter-deposit a Mo back electrode 2 on the surface of the soda-lime glass 1 with a Mo target, with a thickness of about 1 μm;
[0029] (2) Put the soda-lime glass with the Mo back electrode 2 deposited on the surface into the evaporation equipment, and use the co-evaporation method to evaporate the three elements of Cu, In, and S to form CuInS containing S. 2 Thin film prefabricated layer, when the film thickness reaches 400nm, solid Se is evaporated and atomic diffusion forms a Se-containing thin film prefabricated layer, wherein, the thickness of the Se-containing thin film prefabricated layer is about 250nm, annealed in an argon atmosphere for 45min to obtain 1-CuInS 2 Thin film 31 / 1-CuInS x1 Se (2-x1) Thin film 32 composite layers, the total thickness is about 550nm;
[0030] (3) Use Cu, In, and Se in 1-CuInS by co-evaporation method 2 Thin film 31 / 1-CuInS x1 Se (2-x1) CuInSe contain...
Embodiment 2
[0037] Adopt the method identical with embodiment 1 to prepare solar cell, difference is:
[0038] (2) Put the soda-lime glass with the Mo back electrode deposited on the surface into the evaporation equipment, and use the co-evaporation method to evaporate the three elements of Cu, In, and S to form CuInS containing S 2 Thin film prefabricated layer, when the film thickness reaches 400nm, solid Se is evaporated and atoms diffuse to form a Se-containing thin film prefabricated layer. The thickness of the Se-containing thin film prefabricated layer is about 100nm, and annealed in an argon atmosphere for 30min to obtain 1-CuInS 2 Thin film / 1-CuInS x1 Se (2-x1) Thin film composite layer, the total thickness is about 300nm;
[0039] (3) Use Cu, In, and Se in 1-CuInS by co-evaporation method 2 Thin film / 1-CuInS x1 Se (2-x1) Se-containing CuInSe formed on the surface of thin film composite layer 2 Thin film prefabricated layer, the thickness of the film is about 500nm, and t...
Embodiment 3
[0042] Adopt the same method as embodiment 1 to prepare solar cells, the difference is
[0043] (2) Put the soda-lime glass with the Mo back electrode deposited on the surface into the evaporation equipment, and use the co-evaporation method to evaporate the three elements of Cu, In, and S to form CuInS containing S 2 Thin film prefabricated layer, when the film thickness reaches 500nm, solid Se is evaporated and atoms diffuse to form a Se-containing thin film prefabricated layer. The thickness of the Se-containing thin film prefabricated layer is about 300nm, and annealed in an argon atmosphere for 60min to obtain 1-CuInS 2 Thin film / 1-CuInS x1 Se (2-x1) Thin film composite layer, the total thickness is about 700nm;
[0044] (3) Use Cu, In, and Se in 1-CuInS by co-evaporation method 2 Thin film / 1-CuInS x1 Se (2-x1) Se-containing CuInSe formed on the surface of thin film composite layer 2 Thin film prefabricated layer, the film thickness is about 700nm, then evaporate ...
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