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Thin-film solar cell

A technology of solar cells and thin films, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of the photoelectric conversion efficiency of base thin-film solar cells not being achieved.

Inactive Publication Date: 2015-05-27
BYD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention is in order to solve existing CuInSe 2 The photoelectric conversion efficiency of the base thin film solar cell still has not reached the technical problem of the ideal requirement, to provide a kind of thin film solar cell with high open circuit voltage and photoelectric conversion efficiency and easy to realize

Method used

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  • Thin-film solar cell

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Experimental program
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Effect test

Embodiment 1

[0028] (1) Put the cleaned soda-lime glass 1 into a vacuum sputtering device, and sputter-deposit a Mo back electrode 2 on the surface of the soda-lime glass 1 with a Mo target, with a thickness of about 1 μm;

[0029] (2) Put the soda-lime glass with the Mo back electrode 2 deposited on the surface into the evaporation equipment, and use the co-evaporation method to evaporate the three elements of Cu, In, and S to form CuInS containing S. 2 Thin film prefabricated layer, when the film thickness reaches 400nm, solid Se is evaporated and atomic diffusion forms a Se-containing thin film prefabricated layer, wherein, the thickness of the Se-containing thin film prefabricated layer is about 250nm, annealed in an argon atmosphere for 45min to obtain 1-CuInS 2 Thin film 31 / 1-CuInS x1 Se (2-x1) Thin film 32 composite layers, the total thickness is about 550nm;

[0030] (3) Use Cu, In, and Se in 1-CuInS by co-evaporation method 2 Thin film 31 / 1-CuInS x1 Se (2-x1) CuInSe contain...

Embodiment 2

[0037] Adopt the method identical with embodiment 1 to prepare solar cell, difference is:

[0038] (2) Put the soda-lime glass with the Mo back electrode deposited on the surface into the evaporation equipment, and use the co-evaporation method to evaporate the three elements of Cu, In, and S to form CuInS containing S 2 Thin film prefabricated layer, when the film thickness reaches 400nm, solid Se is evaporated and atoms diffuse to form a Se-containing thin film prefabricated layer. The thickness of the Se-containing thin film prefabricated layer is about 100nm, and annealed in an argon atmosphere for 30min to obtain 1-CuInS 2 Thin film / 1-CuInS x1 Se (2-x1) Thin film composite layer, the total thickness is about 300nm;

[0039] (3) Use Cu, In, and Se in 1-CuInS by co-evaporation method 2 Thin film / 1-CuInS x1 Se (2-x1) Se-containing CuInSe formed on the surface of thin film composite layer 2 Thin film prefabricated layer, the thickness of the film is about 500nm, and t...

Embodiment 3

[0042] Adopt the same method as embodiment 1 to prepare solar cells, the difference is

[0043] (2) Put the soda-lime glass with the Mo back electrode deposited on the surface into the evaporation equipment, and use the co-evaporation method to evaporate the three elements of Cu, In, and S to form CuInS containing S 2 Thin film prefabricated layer, when the film thickness reaches 500nm, solid Se is evaporated and atoms diffuse to form a Se-containing thin film prefabricated layer. The thickness of the Se-containing thin film prefabricated layer is about 300nm, and annealed in an argon atmosphere for 60min to obtain 1-CuInS 2 Thin film / 1-CuInS x1 Se (2-x1) Thin film composite layer, the total thickness is about 700nm;

[0044] (3) Use Cu, In, and Se in 1-CuInS by co-evaporation method 2 Thin film / 1-CuInS x1 Se (2-x1) Se-containing CuInSe formed on the surface of thin film composite layer 2 Thin film prefabricated layer, the film thickness is about 700nm, then evaporate ...

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Abstract

The invention provides a thin-film solar cell which comprises a substrate, a back electrode, an absorption layer, a buffering layer, a transparent conductive layer and an upper electrode stacked in sequence. The absorption layer is a composite layer composed of a 1-CuInS2 film, a 1-CuInSx1Se (2-x1) film, a CuInSe2 film, a 2-CuInSx2Se (2-x2) film and a 2-CuInS2 film, wherein the ratio of amount of atoms S to the sum of atoms Se and S in the 1-CuInSx1Se (2-x1) film is 0.1-1, and the ratio of amount of atoms S to the sum of atoms Se and S in the 2-CuInSx2Se (2-x2) film is 0.1-1. The absorption layer is the composite layer of multiple light absorption layers of band gap energy, and since the concentration of S in the absorption layer is in V-shaped distribution, open-circuit voltage and photoelectric conversion efficiency of the solar cell can be improved while usage of toxic Se is reduced. Further, S is low in cost and environment pollution and easy for mass production.

Description

technical field [0001] The invention belongs to the photovoltaic field. Specifically, the present invention relates to a solar cell, in particular to a thin-film solar cell. Background technique [0002] At present, commercialized solar cells mainly include: silicon-based wafer cells, thin-film solar cells, and gallium arsenide-based concentrator solar cells, among which CuInSe 2 Because of its low production cost, high conversion efficiency, good weak light performance, strong radiation resistance, no light-induced degradation, and can be deposited on flexible substrates, thin-film solar cells are internationally known as "the most promising in the next era." new thin-film solar cells". [0003] CuInSe 2 Base (referred to as CIS) thin-film solar cells, mainly composed of substrate / back electrode / absorbing layer / buffer layer / transparent conductive layer / top electrode / anti-reflective layer structure, the absorbing layer is an active component that converts light energy int...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/0352H01L31/06H01L31/0445H01L31/0749
CPCY02E10/541
Inventor 仓芹钟北军周勇
Owner BYD CO LTD