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Polysilicon resistor structure and manufacturing method thereof

A technology of polysilicon resistors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, circuits, etc., can solve the problems of long storage polysilicon strips, the minimum width of storage polysilicon MPOLs cannot be made very small, and the temperature coefficient is large.

Active Publication Date: 2017-09-19
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the polysilicon resistor is an n-type resistor with a large temperature coefficient; in addition, the polysilicon has a high doping concentration, so the resistance value is small, which is not conducive to reducing the circuit area.
[0004] Chinese patent application CN 102214560A proposes a scheme for forming a polysilicon resistor by using a storage polysilicon MPOL, but the minimum width of the storage polysilicon MPOL cannot be made very small, thereby limiting the resistance value of the polysilicon resistor made. When a polysilicon resistor with a larger resistance value is required, a long storage polysilicon strip is required to achieve a large resistance, so it is not conducive to saving chip area

Method used

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  • Polysilicon resistor structure and manufacturing method thereof
  • Polysilicon resistor structure and manufacturing method thereof
  • Polysilicon resistor structure and manufacturing method thereof

Examples

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no. 1 example

[0025] image 3 A flow chart of a method for manufacturing a polysilicon resistor structure according to the first embodiment of the present invention is schematically shown. figure 1 and figure 2 shows the corresponding polysilicon resistor structure, where figure 1 The positional relationship of some regions is schematically shown.

[0026] combine figure 1 , figure 2 as well as image 3 As shown, the method for manufacturing a polysilicon resistor structure according to the first embodiment of the present invention includes:

[0027] First step S1: forming an isolation region 11 in a silicon wafer (not shown in the figure), for example, the isolation region 11 is a shallow trench isolation region or other types of isolation regions;

[0028] The second step S2: forming the first polysilicon layer 2 and the sidewalls 13 of the first polysilicon layer 2 (the media on both sides of the first polysilicon layer 2 ) on the isolation region 11, preferably, the first polysi...

no. 2 example

[0037] figure 2A partial schematic diagram of a top view of a polysilicon resistor structure according to a second embodiment of the present invention is schematically shown. image 3 A cross-sectional view of a polysilicon resistor structure according to a second embodiment of the present invention is schematically shown. Specifically, image 3 is along figure 2 A cross-sectional view taken along the line A-A.

[0038] Such as figure 2 and image 3 As shown, the polysilicon resistor structure according to the second embodiment of the present invention includes: an isolation region 11 and its sidewall 13 arranged in a silicon wafer (for example, the isolation region 11 is a shallow trench isolation region or other types of isolation regions) , the first polysilicon layer 2 formed on the isolation region 11 (preferably, the first polysilicon layer 2 is manufactured by using the production steps of the polysilicon layer used for the source line in the memory production p...

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Abstract

The invention provides a polycrystalline silicon resistor structure and a manufacturing method thereof. The manufacturing method of the polycrystalline silicon resistor structure comprises the following steps of: step 1, forming an isolation region in a silicon wafer; step 2, forming a first polycrystalline silicon layer and a side wall thereof on the isolation region; step 3, forming an isolation matter at the top of the first polycrystalline silicon layer, wherein the isolation matter does not cover the tops of the two ends of the first polycrystalline silicon layer; step 4, forming a second polycrystalline silicon layer on the isolation matter, wherein the second polycrystalline silicon layer does not cover the tops of the two ends of the first polycrystalline silicon layer; and step 5, carrying out ion injection by taking the second polycrystalline silicon layer as a mask so as to form metal silicides on the surfaces of the exposed two ends of the first polycrystalline silicon layer and not form the metal silicide on the surface of the unexposed part of the first polycrystalline silicon layer.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a polysilicon resistor structure and a manufacturing method thereof. Background technique [0002] In semiconductor chip circuit design, a large number of polysilicon resistors are used. Generally, circuit designers use traditional N-type or P-type polycrystalline resistors, but these resistors require a silicide barrier layer (salicideblock layer, SAB) as an additional mask to protect the surface of the silicon chip during the manufacturing process. Under its protection, the silicon wafer does not form undesired metal silicides with other metals such as Ti and Co, which requires an additional photolithography step. Specifically, N-type doped polysilicon or P-type doped polysilicon used as polysilicon resistors in the prior art is performed by performing N-type ion implantation (usually High-concentration boron (B) ion implantation) or P...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L23/64H01L27/06
Inventor 江红
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP