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Ferroelectric film with high energy storage density, and preparation method thereof

A high energy storage density, ferroelectric film technology, applied in the field of capacitor manufacturing, can solve the problems of capacitor energy storage density and large size can not meet the urgent needs of high energy storage capacitors, etc., to achieve the effect of excellent dielectric

Active Publication Date: 2013-03-27
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the development of electronic equipment and its components towards small, light weight, thin and integrated, the energy storage density and large size of existing capacitors can no longer meet the increasingly urgent needs of high energy storage capacitors

Method used

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  • Ferroelectric film with high energy storage density, and preparation method thereof
  • Ferroelectric film with high energy storage density, and preparation method thereof
  • Ferroelectric film with high energy storage density, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] According to 0.1Bi(Ni 1 / 2 Ti 1 / 2 )O 3 -0.9PbTiO 3 Chemical composition, weighing raw materials of lead acetate trihydrate, titanium isopropoxide, bismuth nitrate pentahydrate and nickel acetate tetrahydrate, as well as glacial acetic acid, deionized water, acetylacetone and formamide, in order to compensate for the volatilization of lead and bismuth during heat treatment , lead acetate trihydrate and bismuth nitrate pentahydrate are both in excess of 5%, and a bismuth nickel titanate-lead titanate precursor solution is prepared with a concentration of 0.2-0.4mol / L.

[0032] After standing and aging the prepared precursor solution for 10 days to form a sol, the Pt / Ti / SiO 2 Utilize spin-coating method to prepare film material on / Si substrate, the rotating speed is 5000 rev / mins, and the time is 30 seconds; o C drying 1min, then put into heat treatment furnace at 500 o C pyrolysis for 5min; after repeating the process of "spin-coating-drying-pyrolysis" for 10 times, ...

Embodiment 2

[0036] According to 0.2Bi(Ni 1 / 2 Ti 1 / 2 )O 3 -0.8PbTiO 3 Chemical composition, weighing raw materials of lead acetate trihydrate, titanium isopropoxide, bismuth nitrate pentahydrate and nickel acetate tetrahydrate, as well as glacial acetic acid, deionized water, acetylacetone and formamide, in order to compensate for the volatilization of lead and bismuth during heat treatment , lead acetate trihydrate and bismuth nitrate pentahydrate are both in excess of 5%, and a bismuth nickel titanate-lead titanate precursor solution is prepared with a concentration of 0.2-0.3mol / L.

[0037]After standing and aging the prepared precursor solution for 3 days to form a sol, the Pt / Ti / SiO 2 Utilize spin-coating method to prepare film material on / Si substrate, the rotating speed is 5000 rev / mins, and the time is 30 seconds; o C drying 1min, then put into heat treatment furnace at 500 o C pyrolysis for 5min; after repeating the process of "spin-coating-drying-pyrolysis" for 10 times, fi...

Embodiment 3

[0041] According to 0.3Bi(Ni 1 / 2 Ti 1 / 2 )O 3 -0.7PbTiO 3 Chemical composition, weighing raw materials of lead acetate trihydrate, titanium isopropoxide, bismuth nitrate pentahydrate and nickel acetate tetrahydrate, as well as glacial acetic acid, deionized water, acetylacetone and formamide, in order to compensate for the volatilization of lead and bismuth during heat treatment , lead acetate trihydrate and bismuth nitrate pentahydrate are both in excess of 5%, and a bismuth nickel titanate-lead titanate precursor solution is prepared with a concentration of 0.2-0.3mol / L.

[0042] After standing and aging the prepared precursor solution for 5 days to form a sol, the Pt / Ti / SiO 2 Utilize spin-coating method to prepare film material on / Si substrate, the rotating speed is 5000 rev / mins, and the time is 30 seconds; o C drying 1min, then put into heat treatment furnace at 500 o C pyrolysis for 5min; after repeating the process of "spin-coating-drying-pyrolysis" for 10 times, f...

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Abstract

The invention discloses a ferroelectric film with high energy storage density, and a preparation method thereof. The film material comprises a film and a substrate, wherein the chemical formula of the film is xBi(Ni1 / 2Ti1 / 2)O3-(1-x)PbTiO3, and x is more than or equal to 0.1 and less than or equal to 0.55; the film takes Bi(Ni1 / 2Ti1 / 2)O3 and PbTiO3 ceramics as matrix materials; and the dielectric constant epsilon r of the film ranges from 400 to 900, the low dielectric loss is 2-4%, and the energy storage density is 20-50J / cm<3>. The film material is deposited on a platinum-plated silicon wafer to form a ferroelectric film with compact structure and even ingredients. The film material has excellent dielectric and ferroelectric properties, high breakdown field intensity, and high energy storage density; the magnitude order of the energy storage density is one more than that of a capacitor practically used currently; and the film materials have great potential application prospect in high-temperature large-power devices, and can be used as key materials for developing and applying high-power large-capacity capacitors.

Description

technical field [0001] The invention belongs to the field of capacitor manufacturing, and in particular relates to a ferroelectric film material with high energy storage density and a preparation method thereof. Background technique [0002] With the continuous increase of energy demand and the continuous consumption of fossil fuels, the issue of improving energy storage and utilization efficiency is becoming more and more important. Among the many ways of energy storage, the storage of electrical energy is an important aspect of research. Compared with traditional battery energy storage and chemical energy storage methods, capacitor energy storage has attracted much attention because of its advantages such as fast response, renewability, lightness, and no pollution to the environment. The energy storage density E is a measure of the energy storage capacity of dielectric materials. important parameters of performance. At present, the energy storage density of capacitors co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/472C04B35/475C04B35/622
Inventor 岳振星谢镇坤彭斌
Owner TSINGHUA UNIV
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