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Thin film transistor

A technology of thin film transistors and active layers, which is applied in the manufacture of transistors, semiconductor devices, and semiconductor/solid-state devices, etc., can solve the problems of increased manufacturing cost, complicated crystallization process of polycrystalline SiTFT, and no large-scale substrate manufacturing. Selection range, effect of improving device performance

Inactive Publication Date: 2013-04-03
QINGDAO SHENGJIA INFORMATION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the crystallization process for manufacturing polycrystalline SiTFT is complicated, so the manufacturing cost will increase
Additionally, fabrication of large substrates using polycrystalline Si TFTs has not been possible until recently due to technical issues

Method used

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  • Thin film transistor

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Embodiment Construction

[0018] see figure 1 , figure 1 A schematic structural diagram of the thin film transistor 10 according to the present invention is shown, including a substrate 11 , source and drain electrodes 19 , an active layer 17 , an insulating layer 15 and a gate 13 , wherein the active layer is a VB-containing metal oxide. The VB group metal oxides include one or more of V, Nb and Ta, preferably VInZnO. The substrate is flexible or rigid, preferably glass, plastic. The buffer layer is organic or inorganic, and the organic is preferably epoxy resin and photosensitive material. The inorganic substance is preferably silicon oxide or silicon nitride.

[0019] The above-mentioned each structural layer preparation method is as follows:

[0020] (1) The grid is prepared by vacuum evaporation or sputtering technology.

[0021] (2) Magnetron sputtering Si is used to generate silicon dioxide as a dielectric insulating layer.

[0022] (3) The oxide active layer was prepared by magnetron sput...

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Abstract

The invention relates to a thin film transistor device and a production method thereof. The device comprises a substrate 11, a source drain 19, an active layer 17, an insulating layer 15 and a grid 13, wherein the active layer is oxide containing VB group metal. The structural layers are prepared through vacuum evaporation and sputtering. The thin film transistor is much simpler in process, and more excellent in performance.

Description

technical field [0001] The invention belongs to the field of thin film transistors, in particular to an oxide thin film transistor. Background technique [0002] A thin film transistor (TFT) is a field effect transistor made by depositing a thin film of semiconductor material on an insulating support substrate. Today, most commercially available products (eg, notebook computers, PC monitors, TVs, mobile devices, etc.) include amorphous silicon thin film transistors (a-Si TFTs). As the demand for display devices with larger size and higher image quality increases, electron mobility is required to be higher than that of a-Si TFT (for example, 0.5cm 2 / Vs to 1cm 2 / Vs) High performance thin film transistor and manufacturing technology. [0003] Polysilicon TFTs have better performance than a-Si TFTs. Polysilicon (polySi) TFTs have tens of cm 2 / Vs to hundreds of cm 2 / Vs mobility, so data drive circuits or peripheral circuits required for high mobility can be embedded in ...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L29/20H01L21/336H01L21/31
Inventor 曲志乾于正友魏薇
Owner QINGDAO SHENGJIA INFORMATION TECH