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Laminate film, and film for use in production of semiconductor comprising same

A laminated film, outermost layer technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, layered products, etc., can solve problems such as difficult peeling, twisting or warping, semiconductor wafer deformation, etc., to achieve excellent heat resistance and stress relaxation effects

Active Publication Date: 2013-04-03
MITSUI LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when using a back grinding film or a dicing film with poor heat resistance, it may become difficult to peel off due to heat, etc., or adhere to the workbench (mold).
Furthermore, when the above-mentioned film is deformed by heat such as twisting or warping, the thinned semiconductor wafer may also be deformed.

Method used

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  • Laminate film, and film for use in production of semiconductor comprising same
  • Laminate film, and film for use in production of semiconductor comprising same
  • Laminate film, and film for use in production of semiconductor comprising same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0092] Next, the present invention will be described in detail based on examples, but the present invention is not limited by these examples.

[0093] ・About the test method [heat resistance test]

[0094] A laminate was formed by stacking the strip-shaped aluminum foil cut to a width of 6 cm and the film produced in this example or comparative example. The film was cut so that the longitudinal direction was the TD direction. In addition, the aluminum foil and the film were laminated so that the outermost layer of the film was in contact with the aluminum foil. The obtained laminate was covered with a fluororesin film, and pressurized under the conditions shown below using a heat seal bar (30 cm) to obtain a sample for evaluation.

[0095] Pressure: 0.07MPa

[0096] Sealing strip width: 20mm

[0097] Heat sealing time: 5 seconds

[0098] Sealing strip temperature: 80°C

[0099] Using a tensile tester, the adhesive force (g / 20mm) between the aluminum foil and the film of ...

Embodiment 1

[0130] Use EMAA (1) (ethylene·methacrylic acid random copolymer, manufactured by Mitsui-DuPont Polychemicals Co., Ltd.) shown in Table 1 as the material of the outermost layer, and EMAA-IO (1) shown in Table 2. ) (zinc (Zn) ionomer of ethylene·methacrylic acid random copolymer, manufactured by Mitsui-DuPont Polychemicals Co., Ltd.) As the material for the second layer, a multilayer extruder (40mmφ×3 ) was subjected to extrusion molding, whereby a laminated film having a thickness of 160 μm having a two-layer structure (thickness ratio of the outermost layer to the second layer=30 / 70) was obtained. The evaluation result of the heat resistance of the obtained laminated film was "⊚", and the evaluation result of the stress relaxation property was "◯".

Embodiment 2~9、 comparative example 1~7

[0132] A (laminated) film was obtained in the same manner as in Example 1 above except that the materials of the outermost layer and the second layer and the thicknesses of the outermost layer and the second layer were as shown in Table 3. Table 3 shows the evaluation results of the heat resistance and stress relaxation properties of the obtained (laminated) film.

[0133]

[0134] [evaluate]

[0135] From the results shown in Table 3, it can be seen that the laminated films of Examples 1 to 9 are superior to the (laminated) films of Comparative Examples 1 to 7 in heat resistance and stress relaxation. In addition, when the ionomer of EMAA having a methacrylic acid content of 17% by mass or more was used to form the second layer (Example 1), compared with the ionomer of EMAA having a methacrylic acid content of less than 17% by mass, Compared with the case of forming the second layer (Comparative Examples 4 and 5), the stress relaxation property was excellent.

[0136] It...

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Abstract

The purpose of the present invention is to provide a laminate film which has excellent heat resistance and stress relaxing properties and is suitable as a component member for a film that is used for the production of a semiconductor. The present invention relates to a laminate film (10) having a laminated structure composed of at least two layers including the outermost layer (6), wherein the outermost layer (6) comprises a thermoplastic resin composition containing a thermoplastic resin having a melting point of 98 DEG C or higher, at least one layer (a second layer (3)) other than the outermost layer (6) comprises a resin composition containing an ethylene-(unsaturated carboxylic acid) copolymer having an unsaturated carboxylic acid content of 17 mass% or more or an ionomer of the copolymer.

Description

technical field [0001] The present invention relates to a laminated film and a film for semiconductor production using the same. Background technique [0002] In the manufacturing process of semiconductor devices such as ICs, in order to thin a semiconductor wafer (wafer) on which a circuit pattern is formed, a back grind (back grind) process of grinding the back surface of the semiconductor wafer is generally performed. In this back grinding step, an adhesive film (back grinding film) is bonded to the circuit pattern surface in order to prevent contamination of the circuit pattern surface of the semiconductor wafer, etc., and to maintain a thinned semiconductor wafer. [0003] After the back grinding step, a dicing step is usually carried out in which a stretchable film for wafer processing (dicing film) is attached to the back surface of the polished semiconductor wafer, and the semiconductor wafer is divided. It is a chip (chip) unit process. [0004] A semiconductor wa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304C09J7/02H01L21/301
CPCH01L21/6836C09J2201/162H01L21/304C09J2423/006H01L2221/68327C09J2203/326H01L2221/6834C09J7/02Y10T428/24967Y10T428/2848Y10T428/24942Y10T428/31913Y10T428/31928Y10T428/31797C09J2301/162C09J7/29B32B27/08B32B27/32B32B27/36
Inventor 青山正贵森本厚司一关主税广中芳孝
Owner MITSUI LTD