Ti-Ge-Te series material for phase change memory and preparation method thereof

Abstract

The invention provides a Ti-Ge-Te series material for a phase change memory and a preparation method of the Ti-Ge-Te series material for the phase change memory. The chemical formula of the Ti-Ge-Te series material is Til-x-yGexTey, wherein x is larger than 0 and smaller than 0.8, and y is larger than 0 and smaller than 1 minus x. The method at least comprises the steps that (1) three targets, namely Ge target, Te target and Ti target, are adopted in co-sputtering or two targets, namely Ti target and Ge-Te alloy target, are adopted in the co-sputtering in argon atmosphere; (2) the Ti target adopts radio-frequency power supply or direct-current power supply, in sputtering, direct-current sputtering power is smaller than or equal to 80 watts, and radio-frequency sputtering power is smaller than or equal to 160 watts; (3) the Ge target, the Te target and the Ge-Te alloy target adopt the radio-frequency power supply or the direct-current power supply. A certain amount of Ti is put forward to be mixed into GeTe, when high and low resistance ratios in a plurality of orders of magnitudes are kept, crystallization temperature is further improved, keeping performance of data is increased and amorphous state stability is obviously improved, heat conductivity of materials is reduced due to the certain amount of the Ti mixed into the GeTe so that thermal efficiency is improved, and moreover power consumption of a device is reduced due to the fact that the melting point of the Ti-Ge-Te series material is decreased.

Description

technical field [0001] The invention belongs to the field of microelectronics and relates to a phase-change memory material, in particular to a Ti-Ge-Te series material used for the phase-change memory. Background technique [0002] With the rapid development of portable electronic products, the market demand for non-volatile memory has increased dramatically. As the current mainstream non-volatile storage technology, flash memory has achieved great commercial success, and it is widely used in discrete and embedded chips. However, its long erasing time and limited erasing times cannot meet the requirements of future technological development, and due to the limitation of its own physical mechanism, the reduction of the size of the flash memory unit has encountered many technical bottlenecks. Therefore, people are actively seeking a new generation of non-volatile memory technology that can replace flash memory. Phase change memory (Phase-change Random Access Memory, PRAM fo...

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcoming of the prior art, the object of the present invention is to provide a kind of Ti-Ge-Te series material and preparation method thereof for phase change memory, for solving the problem of Ge-Te system phase change material in the prior art RESET power consumption is high, and its crystallization temperature is low

Images