Surface plasmon electro excitation source and manufacturing method thereof

A surface plasmon and electro-excitation technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as low internal quantum efficiency, incompatibility between organic light-emitting dielectric materials and process integrated circuit technology, and small light-emitting wavelength range. Problems, to achieve high internal quantum efficiency, large luminous wavelength range, and easy integration

Active Publication Date: 2013-04-17
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] The electro-injected organic light-emitting diode is made into a lateral confinement structure, so that the surface plasmons generated between the double metal electrode layers can propagate along the metal electrode, but the organic light-emitting medium material and process are not compatible with the integrated circuit process
[0012] Silicon nanocrystals are placed between the upper and lower metal electrode layers as an active material, and surface plasmons are excited in the near field under the condition of electrical injection, which are coupled out through the grating on the metal electrode, but the internal quantum efficiency of silicon nanocrystals is low. , with a small emission wavelength range

Method used

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  • Surface plasmon electro excitation source and manufacturing method thereof
  • Surface plasmon electro excitation source and manufacturing method thereof
  • Surface plasmon electro excitation source and manufacturing method thereof

Examples

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Embodiment 1

[0047] The invention provides a surface plasmon electric excitation source, its structure is as follows figure 1 shown, including:

[0048] The first metal layer 001 has a thickness of about 100nm and is made of silver;

[0049] The second metal layer 003 has a thickness of about 100nm and is made of silver;

[0050] The quantum well layer 002 between the first metal layer 001 and the second metal layer 003 is made of Al 0.3 Ga 0.7 As / GaAs / Al 0.3 Ga 0.7 Composed of As, the thickness of the AlGaAs layer is 40nm, and the thickness of the GaAs layer is 30nm;

[0051] The outcoupling structure 004 in the second metal layer 003 is a bar grating with a period of 300 nm, a duty ratio of 1:1, and a total width of the grating area of ​​3 microns.

[0052] According to the surface plasmon electric excitation source provided in this embodiment, in the quantum well layer structure AlGaAs / GaAs / AlGaAs, the ratio of Al and Ga in the AlGaAs layer can be changed in the range of 0.2:0.8-0...

Embodiment 2

[0058] This embodiment provides a surface plasmon electric excitation source, the structure of which is as follows Figure 4 shown, including:

[0059] Silicon substrate 110;

[0060] The bonding metal layer 111 on the silicon substrate 110 has a thickness of about 100 nm, and the bonding metal layer 111 is made of Au;

[0061] The first metal layer 107 on the bonding metal layer 111 is made of Au with a thickness of about 100 nm;

[0062] The p-type ohmic contact layer 106 on the first metal layer 107 is made of GaAs with a doping concentration of about 10 15 cm -3 , with a thickness of 25nm;

[0063] The quantum well layer 105 on the p-type ohmic contact layer 106 is made of Al 0.3 Ga 0.7 As / GaAs / Al 0.3 Ga 0.7 Composed of As, the thickness of the AlGaAs layer is 25nm, and the thickness of the GaAs layer is 15nm;

[0064] The n-type ohmic contact layer 104 on the quantum well layer 105 is made of GaAs with a doping concentration of about 10 17 cm -3 , with a thickn...

Embodiment 3

[0075] According to an embodiment of the present invention, a method for manufacturing a surface plasmon electric excitation source is also provided, the process flow of which is as follows Image 6 (a) to Image 6 (f), including:

[0076] a) Grow a 25nm GaAs buffer layer 102, a 100nm GaInP etch barrier layer 103, and an n-type GaAs ohmic contact layer 104 (thickness 25nm, doping concentration 10nm) on the GaAs substrate 101 by MOCVD 17 cm -3 ), Al 0.3 Ga 0.7 As / GaAs / Al 0.3 Ga 0.7 As quantum well layer 105 (AlGaAs layer thickness is 25nm, GaAs layer thickness is 15nm), p-type GaAs ohmic contact layer 106 (thickness is 25nm, doping concentration is 10nm 15 cm -3 ), forming a quantum well epitaxial wafer;

[0077] b) On the p-type GaAs ohmic contact layer 106 of the silicon substrate 110 and the quantum well epitaxial wafer, the electron beam deposits the bonding metal layer 111 and the first metal layer 107 respectively, and the thickness of the bonding metal layer 111 ...

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Abstract

The invention provides a surface plasmon electro excitation source, which comprises a first metal layer, a second metal layer, a quantum well layer arranged between the first metal layer and the second metal layer, and a coupling output structure in one of the first metal layer and the second metal layer. The invention also provides a manufacturing method of the surface plasmon electro excitation source.

Description

technical field [0001] The invention relates to a surface plasmon electric excitation source. Background technique [0002] Surface plasmon refers to the electromagnetic wave propagating along the interface generated by the interaction between freely vibrating electrons and photons existing at the metal-dielectric interface. Surface plasmons can break through the diffraction limit, and provide a platform for the integrated development of photonics and microelectronics at the nanoscale. In the case of the same frequency, the wave vector of the surface plasmon is larger than the light wave vector, so the surface plasmon cannot be directly excited by the light wave. At present, the commonly used excitation method is through prism coupling, grating coupling or Mechanisms such as single scatterer scattering are used to achieve wave vector matching to excite surface plasmons. However, such an optical excitation method is difficult to meet the requirements of high integration and...

Claims

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Application Information

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IPC IPC(8): H01L33/04H01L33/30H01L33/14H01L33/00
Inventor 李敬徐红星
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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