Square spray nozzle structure for vapor phase epitaxy of material

Abstract

The invention discloses a square spray nozzle structure for vapor phase epitaxy of a material. The square spray nozzle structure solves the problem of providing a uniform precursor mixture for a large substrate and a large deposition region. The square spray nozzle structure is characterized in that multiple independent isolation regions are sequentially formed in a square spray nozzle from top to bottom, the top of the square spray nozzle is provided with input pipelines communicated with the isolation regions, multiple gas spray pipes are arranged at the bottom of the isolation regions, and nozzle orifices of the gas spray pipes are arranged at the bottom of the square spray nozzle. According to the square spray nozzle structure, a precursor and various gases are mixed and then deposit on the surface of the substrate through the independent isolation regions and the combined utilization manner of the multiple spray nozzles, and the production efficiency is improved.

Description

technical field [0001] The present invention relates to an apparatus and method for chemical vapor deposition (CVD) on a substrate, and more particularly to a showerhead design for use in hydride vapor phase epitaxy (HVPE). Background technique [0002] Hydride vapor phase epitaxy (HVPE) technology has the characteristics of fast growth rate and low production cost, and is very suitable for the growth of group III-nitride semiconductor materials, such as the mass production of gallium nitride (GaN) wafers. As the demand for LEDs, LDs, transistors, and integrated circuits increases, the efficiency of depositing high-quality III-nitride films takes on greater importance. To increase throughput and throughput, uniform mixing of precursors over larger substrates and / or more substrates and larger deposition areas is desirable. These factors are very important as they directly affect the cost of producing electronic devices and thus the competitiveness of the devices in the marke...

AI Technical Summary

Problems solved by technology

When the size of the substrate becomes larger or the number of substrates increases, due to the structural limitation of the circular shower head, the mixing of the precursor is not uniform enough, or the coverage area is too small, so it is not suitable for the growth of large-size substrates or a large number of substrates However, the current nozzle structure on semiconductor growth equipment has certain limitations in the use of large-size / large-deposition areas. The uniformity of precursors on large-size substrates / large deposition areas is not good and the production efficiency is too low. Therefore, it is necessary to improve the nozzle used in the hydride vapor phase epitaxy (HVPE) technology

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