Square spray nozzle structure for vapor phase epitaxy of material

A technology of vapor phase epitaxy and nozzle, which is applied in the field of square nozzle structure for material vapor phase epitaxy, which can solve the problems of low production efficiency, small coverage area, uneven mixing of precursors, etc., and achieve the effect of improving production efficiency and quality

Active Publication Date: 2013-04-24
SINO NITRIDE SEMICON +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the size of the substrate becomes larger or the number of substrates increases, due to the structural limitation of the circular shower head, the mixing of the precursor is not uniform enough, or the coverage area is too small, so it is not suitable for the growth of large-size substrates or a large number of substrates However, the current noz...

Method used

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  • Square spray nozzle structure for vapor phase epitaxy of material
  • Square spray nozzle structure for vapor phase epitaxy of material
  • Square spray nozzle structure for vapor phase epitaxy of material

Examples

Experimental program
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Effect test

Embodiment 1

[0024] Reactions involving chemical vapor deposition (CVD) or hydride vapor phase epitaxy (HVPE) require high temperature conditions. Therefore, the material of the nozzle structure needs to be selected with high strength, no chemical reaction with the reaction gas, and a material with a low thermal expansion coefficient.

[0025] Quartz material has a low coefficient of thermal expansion, high strength, and does not react with various reactive gases, so quartz is used to make the nozzle.

[0026] After hydrogen chloride passes through the gallium source, it forms a mixture of gallium chloride, and enters the first isolation area of ​​the nozzle through the pipe, diffuses evenly in the nozzle, and then discharges through the central pipe below.

[0027] Ammonia gas enters the sprinkler head through the intake pipe, spreads evenly in the ammonia gas area, and then is discharged through the pipe below.

[0028] Nitrogen enters the spray head through the intake pipe, spreads eve...

Embodiment 2

[0032]Reactions involving chemical vapor deposition (CVD) or hydride vapor phase epitaxy (HVPE) require high temperature conditions. Therefore, the material of the nozzle structure needs to be selected with high strength, no chemical reaction with the reaction gas, and a material with a low thermal expansion coefficient.

[0033] Quartz material has a low coefficient of thermal expansion, high strength, and does not react with various reactive gases, so quartz is used to make the nozzle.

[0034] By using multiple quartz shower heads in combination, a larger reaction area can be formed in the reaction chamber, which is beneficial to the growth of large-sized substrates or a large number of substrates.

[0035] After hydrogen chloride passes through the gallium source, it forms a mixture of gallium chloride, and enters the first isolation area of ​​the nozzle through the pipe, diffuses evenly in the nozzle, and then discharges through the central pipe below.

[0036] Ammonia g...

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Abstract

The invention discloses a square spray nozzle structure for vapor phase epitaxy of a material. The square spray nozzle structure solves the problem of providing a uniform precursor mixture for a large substrate and a large deposition region. The square spray nozzle structure is characterized in that multiple independent isolation regions are sequentially formed in a square spray nozzle from top to bottom, the top of the square spray nozzle is provided with input pipelines communicated with the isolation regions, multiple gas spray pipes are arranged at the bottom of the isolation regions, and nozzle orifices of the gas spray pipes are arranged at the bottom of the square spray nozzle. According to the square spray nozzle structure, a precursor and various gases are mixed and then deposit on the surface of the substrate through the independent isolation regions and the combined utilization manner of the multiple spray nozzles, and the production efficiency is improved.

Description

technical field [0001] The present invention relates to an apparatus and method for chemical vapor deposition (CVD) on a substrate, and more particularly to a showerhead design for use in hydride vapor phase epitaxy (HVPE). Background technique [0002] Hydride vapor phase epitaxy (HVPE) technology has the characteristics of fast growth rate and low production cost, and is very suitable for the growth of group III-nitride semiconductor materials, such as the mass production of gallium nitride (GaN) wafers. As the demand for LEDs, LDs, transistors, and integrated circuits increases, the efficiency of depositing high-quality III-nitride films takes on greater importance. To increase throughput and throughput, uniform mixing of precursors over larger substrates and / or more substrates and larger deposition areas is desirable. These factors are very important as they directly affect the cost of producing electronic devices and thus the competitiveness of the devices in the marke...

Claims

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Application Information

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IPC IPC(8): C30B25/14C23C16/455
Inventor 张俊业刘鹏毕绿燕赵红军袁志鹏张国义童玉珍
Owner SINO NITRIDE SEMICON
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