Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for emulating large-capacity memory by imitating netlist after simplifying memory

A large-capacity memory and memory technology, which is applied in instruments, special data processing applications, electrical digital data processing, etc., can solve problems such as difficulty in simulation of large SRAMs, and achieve the effect of reducing simulation difficulty and improving simulation speed.

Active Publication Date: 2016-06-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method of imitating the netlist after simplifying the memory to realize the simulation of the large-capacity memory, the method realizes the simulation of the large SRAM (memory) by generating the simplified netlist, and solves the problem of large memory in the MemoryCompiler design process. SRAM simulation is difficult, and the simulation speed is improved, and the design risk brought to customers due to the estimation method is reduced.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for emulating large-capacity memory by imitating netlist after simplifying memory
  • A method for emulating large-capacity memory by imitating netlist after simplifying memory
  • A method for emulating large-capacity memory by imitating netlist after simplifying memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] After simplifying the memory of the present invention, imitating the netlist to realize the method for large-capacity memory simulation, its flow chart is as follows figure 1 As shown, the steps include:

[0021] 1) formulate the critical path, and generate the netlist of the critical path; wherein, the generation method of the critical path is as follows:

[0022] According to a general SRAM structure block diagram (such as figure 2 As shown), the SRAM is divided into 6 structural blocks (the structural blocks surrounded by the thickest black line in the figure), and each block is numbered separately:

[0023] Structural block 1 is a control signal generation circuit, such as clock signal generation, input signals such as address, write enable (writeenable) signal latch, and address pre-decoding circuit; the circuit structure of structural block 1 has no rules;

[0024] Structural block 2 is the decoding circuit XDEC in the X direction, which is composed of identica...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for simulating a high-capacity memory by imitating a net list after simplifying the memory. The method includes the steps: 1) setting out a critical path to generate a net list of the critical path; 2) marking a global connecting line on a Memory gds and extracting a net list containing parasitic information of the global connecting line from the Memory gds; 3) back marking capacitance and load for the net list of the critical path by the aid of the net list containing the parasitic information of the global connecting line; 4) extracting resistance information of the global connecting line in the Memory gds; 5) back marking resistance and processing a TT-shaped network for the net list of the critical path; and 6) using a new simplified net list for simulation. On the premise of ensuring simulation precision, the size of the net list is furthest reduced, simulation is greatly accelerated, a large SRAM (static random access memory can be possibly simulated, and software simulation difficulty is reduced.

Description

technical field [0001] The invention relates to a memory simulation method in the design process of a semiconductor MemoryCompiler (storage body compiler software), in particular to a method for realizing large-capacity memory simulation by imitating a netlist after simplifying the memory. Background technique [0002] For a common SOC (System Ona ​​Chip, system-on-a-chip) design, the on-chip memories SRAM, ROM, etc. account for about 20% of the chip area. Most of these on-chip memories are generated with MemoryCompiler. MemoryCompiler can generate Memorycells of different sizes and their models (models) according to customer needs. Among them, the Synopsys (software company name) model requires SRAM timing (timing) information, such as setup / hold (setup time / stop time), delay (Delay), capacitance (capacitance), these must be obtained by simulating the generated SRAM. The simulation must reflect the real timing information of the Memory, and the simulation netlist used mus...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 黄慧娟潘炯杨光华
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products