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Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices

A technology for water polishing and composition, applied in the field of new aqueous polishing composition, to achieve the effect of excellent global and local flatness, improved process management, and improved selectivity

Inactive Publication Date: 2013-05-08
BASF AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it only discloses the polishing of glass

Method used

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  • Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices
  • Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices
  • Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices

Examples

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preparation example Construction

[0145] The compositions of the present invention can be prepared without any particularity, but by dissolving or dispersing the abovementioned ingredients (A), (B) and (C) and optionally (D) and / or (E) in an aqueous medium, in particular performed in deionized water. For this purpose, customary and standard mixing methods and mixing equipment can be used, such as stirred tanks, in-line dissolvers, high-shear high-speed mixers, ultrasonic mixers, homogenizer nozzles or convective mixers. The composition of the invention thus obtained is preferably filterable through a filter having suitable mesh openings to remove coarse-grained particles such as agglomerates or aggregates of finely divided solid abrasive particles (A).

[0146] The compositions of the invention are well suited for the methods of the invention.

[0147] In the method of the invention, the substrate of an electronic, mechanical and optical device, especially an electronic device, most preferably an integrated c...

Embodiment 1-11

[0166] Preparation of Aqueous Polishing Compositions 1-11

[0167] To prepare aqueous polishing compositions 1-11, cerium oxide (average particle size d as measured by dynamic laser light scattering) 50 120-140nm), sodium hexametaphosphate (PP; weight ratio of cerium oxide to PP = 200, hereinafter referred to as PP 200 ; The weight ratio of cerium oxide to PP=300, hereinafter referred to as PP 300 ) and inositol dispersed or dissolved in ultrapure water. The amounts used are summarized in Table 2.

[0168] Table 2: Composition of Aqueous Polishing Compositions 1-11

[0169] Composition number

[0170]Aqueous polishing compositions 1-11 of Examples 1-11 are extremely useful for chemical mechanical polishing of substrates for electronic, mechanical and optical devices.

Embodiment 12-22 and comparative example C7-C12

[0172] CMP and oxide-to-nitride selectivity of silica-coated blank wafers and silicon nitride-coated blank wafers

[0173] Table 3 shows the aqueous polishing compositions used in Examples 12-22 and Comparative Tests C7-C12.

[0174] Table 3: Aqueous polishing compositions and silica layer types used in Examples 12-22 and Comparative Tests C7-C12

[0175]

[0176] HDP: high density plasma silicon dioxide;

[0177] TEOS: Tetraethyl orthosilicate CVD type oxide

[0178] In the following, CMP uses the following process parameters.

[0179] Embodiment 12 and comparative tests C7-C10:

[0180] - Polishing equipment: Strasbaugh6EGnHance (rotary type):

[0181] - Platform speed: 93rpm;

[0182] - Carrier speed: 87rpm;

[0183] - IC1000 / Suba400K groove polishing pad produced by Rohm&Haas;

[0184] - Use the S603M diamond regulator to adjust in situ;

[0185] - Slurry flow rate: 200ml / min;

[0186] - Substrates: SiO2 blank wafers (see Table 3) and 500nm CVD silicon nitride...

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Abstract

An aqueous polishing composition having a pH of 3 to 11 and comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and of a pH of 3 to 9 as evidenced by the electrophoretic mobility; (B) anionic phosphate dispersing agents; and (C) a polyhydric alcohol component selected from the group consisting of (c1) water-soluble and water-dispersible, aliphatic and cycloaliphatic, monomeric, dimeric and oligomeric polyols having at least 4 hydroxy groups; (c2) a mixture consisting of (c21) water-soluble and water-dispersible, aliphatic and cycloaliphatic polyols having at least 2 hydroxy groups; and (c22) water-soluble or water-dispersible polymers selected from linear and branched alkylene oxide homopolymers and copolymers (c221 ); and linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers (c222); and (c3) mixtures of (c1) and (c2); and a process for polishing substrates for electrical, mechanical and optical devices.

Description

[0001] The present invention relates to a novel aqueous polishing composition which is especially suitable for polishing substrates for electronic, mechanical and optical devices. [0002] Furthermore, the invention relates to a novel method of polishing substrates for the manufacture of electronic, mechanical and optical devices. [0003] Last but not least, the present invention relates to novel uses of novel aqueous polishing compositions for the manufacture of electronic, mechanical and optical devices. [0004] Citation [0005] Documents cited in this application are incorporated by reference in their entirety. Background of the invention [0006] Chemical-mechanical planarization or polishing (CMP) is the primary method for achieving local and global flatness of integrated circuit (IC) devices. This technique typically employs a CMP composition or slurry containing abrasives and other additives as the active chemistry between the rotating substrate surface and the pol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09G1/04C09G1/18C09K3/14
CPCC09G1/02H01L21/31053C08K2201/008C09K13/00C08L33/24C09K3/1463C09K3/14C09G1/04H01L21/304
Inventor Y·李J-J·楚S·S·文卡塔拉曼S·A·奥斯曼易卜拉欣H·W·平德尔
Owner BASF AG
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